Circuit Technology tor Mobile/Personal Communications Toshio Nojima, Yoshiaki Tarusawa and Shoichi Narahashi NTT Mobile Communications Network Inc. . ABSTRACT This paper reviews the microwave circuit technology recently developed by NTT Mobile Communications Network Inc. (NTT DoCoMo) for mobile/personal communication systems. The circuit construction techniques of highly efficient power ampl

MICROWAVE AND MILLIMETERWAVE HBT DEVELOPMENT IN JAPAN K.Honjo Microelectronics Research Labs. NEC Corporation ABS'fRAC1' Research and development activities in Japan for microwave and millimeterwave HBT's are reviewed. Selective p+-GaAs regrowth techniques, and a Pt/Ti/Pt/Au contact metal sysem are effective for improving maximum oscillation frequency, fmax. Ballistic collection transistor ( BC

Trends of Research on Microwaves/Optics Masami Akaike Science University of Tokyo 1-3 Kagurazaka, Shinjuku-ku, Tokyo, 162 Japan E-mail: akaike-akaitOfl.ee.kagu.sl1t.ac.jp inJapan ABSTRACT .. Recent growing demand, both in quantity and quality, for communications triggers the communication technology to incorporate and integrate media of two different genre, i.e., microwaves and lightwaves (optic

OPTICAL INTERACTION OF ACTNE INTEGRA TED ANTENNAS. (Invited Paper} S. Kawa~aki'"and Tatsuo Itoh Ele<;:trical Engineering Department .1 tJ niversity of Califomia, Los Angeles Los Angeles, CA 90024~1594 U.S.A. ABS1RACT "' This paper describes research effort on optical control of active integrated antennas. First, the concept of active integrated antenna is described. Next, how optical techniqu

AIGaAs/GaAs HeteroJunction Bipolar Transistor Technology for Multi-Giga-Samples per Second ADCs K.C. Wang, K. R Nary, RB. Nubling, S.M. Beccue, RL. Pierson, M.F. Chang, P.M: Asbeck-t+ Rockwell Science Center, Thousand Oaks, CA 91360 USA and R.T. Huang Rockwell Microelectronics Technology Center Newbury Park, CA 91320 USA. ABSTRACT This paper reports a manufacturable AIGaAs/GaAs heterojunction bipo

Design Considerations for High Efficiency GaAs . ~ HBT MMIC Powe~AlIlplifiers (Invited Paper) ,,' , .. Fazal Ali Westinghouse Electric Corporation Advanced Technology DivisIon P. O. Box 1521, MS 3Kll Baltimore, Maryland 21203 U.S.A. ABSTRACT This paper provides a synopsis of the design considerations for high efficiency, MMIC power amplifiers based on GaAs Heterojunction Bipolar Transistor (HB

RECENT EUROPEAN DEVELOPMENT PROGRAMMES FOR VOLUME APPLICATIONS OF MILLIMETER WAVES IC's THOMSON-CSF ABSTRACT The advantages of using mm-waves are well known (directivity, high capacity, high bandwidth) and throughout the world, important development work is carried out on mm-wave IC's. In Europe, with the support of the Commission of the European Union, there are, since few years, considerable eff

RECENT ADVANCES IN mE STUDIES OF FREQUNCY MULTIPLIERS AT MILLIMETER AND SUBMILLIMETER WAVELENGms Antti VI Raisanen Helsinki University of Technology, Radio Laboratory Otakaari 5 A, FIN-02150 Espoo, Finland ABSTRACT ~ Frequency multipliers are used to generate local oscillator power for heterodyne receivers at millimeter and submillimeter wavelengths. So far, these multipliers are mainly based o

Low Cost Packages for Micro- and MilUmeterwave' Circuits. Manfred Boheim, Uhland Goebel Deutsche Aerospace Sedanstr. 10. D-89070 ~ ABSTRI\CT The paper summarizes the state of the art of ceramic and metal Packages for planar micro- and millimeterwave circuits. Typical examples are shown. Criteria for east reduction and high volume production capability are discussed. Recent results of research on p