DISPERSIVE ANALOGIES A Sihvola 1 ABSTRACT PROPERTIES OF MICROWAVE WITH FERRITES CHIRAL COMPOSITE MATERIALS: This contribution studies the frequency dispersion of chiral (handed, magnetoelectric) composite materials. Mixing formulae are applied to study the effect with which the dispersion of the chiral inclusion phase is transformed into the frequency dependence of the heterogeneous composite

HOW TO DETERMINE CHIRAL MATERIAL PARAMETERS Markku Oksanen*, Arto Hujanen** ABSTRACT This paper discusses how material parameters of a chiral slab can be determined from the measured reflected and transmitted fields of the slab in free space. The method uses a so called K-notation in the constitutive relations of a chiral material. This allows one to derive analytical formulas for permittivity,

FREQUENCY CONVERSION MICROWAVE CIRCUITS IN HIGH-Tc SUPERCONDUCTOR H. Chaloupkal, M. Jeekl, S. Kolesov2 and O. Vendik2 ABSTRACT Experimental investigations of the nonlinear dynamic response of narrow planar strip conductors made from epitaxially grown high-Tc superconductors (HTS) have been performed. Frequency conversion due to these nonlinear effects were studied by means of measurements with

A NEW AND SIMPLE CALIBRATION PARAMETERS UP TO 40 GHz M. Fossion, I. Huynen, D. Vanhoenacker, METHOD FOR MEASURING PLANAR LINES A. Vander Vorst1 Abstract This paper presents a new method for extracting the wavelength and losses of dispersive lossy planar lines from measurements made up to 40 GHz. It requires only two lines, differing by their length, while the LRL method necessites four ele

Power Detector with GaAs Field Effect Transistors H.-G. Krekels, B. Schiek and E. MenzelAbstract - A novel power detector for fast power measurements in RF technology is presented. The essential detector elements are field effect are used as passive elements, the detector power detector also shows a low sensitivity temperature stability and dynamic range detector. transistors. Due to the fact th

RESISTIVE SENSORS MEASUREMENTS R.Baltusis, ABSTRACT M.Dagys, FOR HIGH *. PULSE POWER MICROWAVE R.Simniskis Original resistive sensors (RS) based on the effect of semiconductor bulk resistance change due to microwave electric field are designed. The resistive sensors are developed for high pulse power (lW-lOOkW) measurements in rectangular waveguides. Resistive sensors have fast response tim

ELECTRON BEAM TEST SYSTEM FOR GHZ-WAVEFORM MEASUREMENTS ON TRANSMISSION LINES WITHIN MMIC .1.Fehr, E. Kubalek ABSTRACT A system for measurements of waveforms on transmission lines within microwave integrated circuits based on a scanning electron microscope has been developed. For the first time it offers simultaneously a spatial resolution of less than 10µm, a temporal resolution better than 10ps

Direct Extraction of All Four Transistor Noise Parameters from a Single Noise Figure Measurement P J. Tasker, W. Reinert, J. Braunstein and M. Schlechtweg* Abstract A measurement and analysis technique has been developed that allows for, after s-parameter measurements, direct extraction of all four transistor noise parameters from a single noise figure measurement. A simple 50 Q noise source meas

RF INVESTIGATIONS ON HEMT's ON-WAFER AT CRYOGENIC TEMPERATURES DOWN TO 20 K USING AN MICROWAVE MEASUREMENT SETUP H. Meschede, 1. Albers, R. Reuter, 1. Kraus, D. Peters, W. Brockerhoff, F. 1. Tegude ABSTRACT Microwave measurements at cryogenic temperatures are very important to investigate the pronounced microwave performance of High Electron Mobility Transistors (HEMT) /1,2/. In order to perfor

A NEW 17...23 GHz CAVITY STABILIZED, HERMETICALLY IN CHIP TECHNIQUE SEALED MODULE VCO W. Hess*, R. Walter* ABSTRACT Design, fabrication and perfonnance of a K-band vco in chip technique on alumina substrate is described. Results gained by simulation and measurements are presented and give courage to use direct carrier generation in the radio frequency range saving frequency doublers and amplifi