Field Theory Design of Metal Septum Loaded Circular Waveguide Filters B. Varailhon de 1a Filolie and R. Vahldieck ABSTRACT This paper describes the analysis and design of a metal septum loaded circular waveguide filter suitable for millimeter-wave applications. The filter is composed of a ladder shaped metal insert embedded in a split block circular waveguide housing. The theoretical design proce

FULL WAVE ANALYSIS PACKAGE FOR ARBITRARILY SHAPED MULTI CONDUCTOR TRANSMISSION LINES. APPLICATION TO THE STUDY OF THE PROXIMITY EFFECTS IN REAL INTEGRATED CIRCUITS. J.CHARLES*, D.BAJON**, H.BAUDRAND*Senior Member IEEE ABSTRACT A full-wave analysis implemented on a personal computer for the characterization of arbitraritly shaped multiconductor waveguide is presented. The study of the proximity ef

A FuIl- Wave Analysis of Arbitrary Guiding Structures Using a Two Dimensional TLM Mesh Hang Jin , Ruediger Vahldieck and Shujun Xiao Abstract This paper introduces an improved TLM analysis method for full-wave analysis of arbitrary guiding structure. In contrast to the conventional TLM full-wave analysis, this new method is based on a novel TLM mode and only requires two dimensional mesh and the

FORMAL EQUIVALENCE AND EFFICIENCY COMPARISON OF THE FD-TD TLM METHODS IN APPLICATION TO MICROWAVE CAD PROGRAMS AND SN Malgorzata Celuch - Marcysiak, . WoJciech K.Gwarek . ABSTRACT In this study, the Theorem of Equivalence of the FD-TD, TLM and SN methods in application to the analysis of microwave circuits is derived. Computer resources required by FD-TD, TLM and SN are thoroughly compared

CHAOTIC BEHAVIOUR OF GUNN OSCILLATORS * M. I. Sobhy, E. A. Hosny and A. A. A. Nasser ABSTRACT The purpose of this paper is to demonstrate that chaotic behaviour can occur in practical microwave non-linear circuits and to present methods of analysis that can predict such behaviour. Theoretical and practical results are presented for Gunn diode oscillators. The methods of analysis presented he

HIGHLY STABLE 15 dBm LOW NOISE GaAs MESFET SOURCE AT 45 GHz USING A GaAs PHEMT AS A FREQUENCY DOUBLER A P S Khanna, Carl Creamer, Ed Topacio* & Edmar Camargo** ABSTRACT A highly stable GaAs MESFET dielectric resonator oscillator with a GaAs PHEMT frequency doubler, operating at 45 GHz, has been developed. The oscillator presents + 15 dBm minimum output power, +0.01% temperature stability and -8

I GaAs BIPOLAR BROADBAND OSCILLATORS P J Topham!, A Deam2, G Parkinson3 ABSTRACT The GaAs heterojunction bipolar transistor (HBT) has been investigated for use in oscillators due to its combination of low flicker noise and high frequency performance. The HBT characteristics in oscillators have been assessed by constructing both varactor tuned oscillators (VTO) and, for the first time, YIG t

A. MMIC for the Construction Microwave of Nearly Arbitrary . Bernd Roth ; RaJf Tempel; SenIor . Oscillators by . . Beyer, Welke Hut andAdalbert Member IEEE Abstract In this paper a MMIC is proposed which allows to construct many types of technical relevant microwave oscillators like VCO, DRO, YIG and cavity stabilized oscillators up to 40 GHz (fundamental oscillation). It is based on a F

MILLIMETRE WAVE MONOLITHIC HEMT OSCILLATORS WITH A STANDARD 0.5 µm PROCESS FABRICATED P. GAMAND*, B.J. MINNIS***, P. SUCHET*, P. FRIJLINK**, A. DESWARTE*, J.C. MEUNIER*, M. PERTUS*, A. BELACHE* Abstract: This paper describes 3 types of free running oscillators that have been designed and fabricated using a 0.5 micron HEMTprocess. Output powers, including the waveguide transition, of -3 to -5 dB

LARGE SIGNAL ANALYSIS AND EXPERIMENTAL CHARACTERISTICS InP-BASED W-BAND and Dimitris Pavlidis OF MONOLITHIC Youngwoo Kwon HEMT OSCILLATORS ABSTRACT A large signal analysis method for simulating HEMT oscillators has been developed and applied to the design of a monolithic W-band HEMT oscillator. The analysis method uses measured small-signal S-parameters and employs a two-dimensional cubic spl