GaAs MONOLITHIC ACTIVE INDUCTORS MICROWAVE INTEGRATED CIRCUITS USING BROADBAND TUNABLE ** L.Scopelliti* E.M.Bastida*, ABSTRACT G.P.Donzelli*, The design and the performance of new broadband tunable active inductors are presented and discussed. These circuits allow reactance variations to be obtained one order of magnitude greater than those achievable with onchip varactor diodes. As a pro

LOW-NOISB WITH LOW GaAs POWER MONOLITHIC CONSUMPTION L-BAHD B/D-AMPLIPIBRS Bsko Jarvinen* ABSTRACT This paper describes the design and performance of GaAs monolithic L-band amplifiers with low power consumption. The amplifiers have been fabricated by using 1-µm enhancement/depletion mode (E/D) technology. One amplifier has 11 dB gain and a noise figure of 3 dB max. at 1 GHz with DC-power co

A 2-20GHZ GAAS MESFET VARIABLE ATTENUATOR USING A SINGLE POSITIVE EXTERNAL DRIVE VOLTAGE Horng Jye Sun, Wang Wu, and James Ewan ABSTRACT A GaAs MESFET monolithic variable attenuator has been developed covering 2-20GHz bandwidth. A novel DC biasing and control scheme, by applying control voltage to the gate as well as the drain/source nodes of the MESFETs, allows the biasing and control of the IC

ON THE TRANSmON W. Menzel *, A. Klaassen FROM RIDGED WAVEGUIDE TO MICROSTRIP ABSTRACT In conjunction with the transition from waveguide to microstrip via a rigded waveguide structure, two problems are investigated. The first one concerns the impedance of the ridged structure including a dielectric layer on the bottom of the waveguide, the second one the field discontinuity when an unloaded ridg

X-BAND LOCAL OSCILLATOR DISTRIBUTION NETWORK Sarjit S. Bharj*, S.P. Tan, J. Gluck, B. Thompson** ABSTRACT An X-BAND local oscillator network has been designed and developed to provide in excess of +8dBm for four independent channels. The network consists of an X-band voltage controlled oscillator tunable from 8 to 12 GHz. The output of the oscillator is input to a set of three MMIC in phase po

WIDE INSTANTANEOUS FREQUENCY DMDERS C. Dalle, E. Abi Chaaya, BANDWIDTH ANALOG AVALANCHE DIODE M. Verschoore, P.A. Rolland ABSTRACT In this paper the potential interest of analog avalanche diode frequency dividers is demonstrated. Indeed experiments performed on avalanche diode frequency dividers with division ratios of 2,3 and 4 in the centimeterwave range have pointed out the possibility

RADAR BURN OUT STUDIES OF LOW NOISE HEMTs AND GaAs FETs P Gardner * ABSTRACT Measurements of gain recovery frorn overload and catastrophic burn out are described for a range of low noise HEMTs and GaAs FETs. The overload pulses used are simulated X-Band radar leakage pulses. The recovery results show similar recovery times for HEMT devices as for conventional GaAs FETs. The burn out results s

A VERY FLAT VARIABLE GAIN AMPLIFIER Daniel ROQUES, Jean-Louis MMIC FOR C-BAND SATELLITE POUYSEGUR and Serge RECEIVER CAZAUX, Michel BERTRAND.* ABSTRACT This paper describes the design, the realization, and the performance of two versions of an analog C-band GaAs variable gain amplifier module suitable to application in C-band satellite receiver. This modules uses the ability of the Dual-Gate

A DIRECT METHOD OF SYNTHESIS FILTERS FOR A CLASS OF WAVEGUIDE E. TOPUZx ABSTRACT A direct method of synthesis on insertion loss basis is presented for symmetrical waveguide filters which can be modelled by a cascade chain of lumped parameter, reactive, symmetric two-ports and lengths of unimodal waveguide sections (Fig. 1). The presented method is rather general, easy to implement numerical

AN IMPROVED EQUIVALENT MODEL FOR MICROSTRIP CROSS-JUNCTION F. Giannini*, G. Bartolucci*, M. Ruggieri* ABSTRACT Recent advances in monolithic technology point out the need for simple and accurate CAD modeling of microstrip discontinuities. The paper presents a new lumped equivalent circuit for the microstrip cross-junction element. The model, based an a planar analysis of rectangular patches,