LOW-NOISE HEMT BY MOCVD FOR SATELLITE RECEPTION
K. Tanaka, H. Suzuki, K. Togashi, H. Takakuwa, S. Tsurumaru, Y. Kato
LOW-NoISE
HEMT bY MOCVD FOR SATELLITE RECEPTION
K. Tanaka,
H. Suzuki,
K. Togashi,
H. Takakuwa,
S. Tsurumaru
.
and Y. Kato
ABSTRACT
AlGaAs/GaAs HEMTs for microwave applications have been MOCVD (Metal Organic Chemical Vapor Deposition). The HEMTs described in this paper, having gate lengths of 0.5 microns and gate widths of 200 and 300 microns, have displayed low noise figure, high reliabi