A NEW FILTERS REALIZATION OF DUAL MODE DIELECTRIC RESONATOR Kawthar A. Zakit, Chunming Chent, and Ali E. Atia* ABSTRACT A new realization of dual hybrid mode dielectric resonator band pass filters is presented. All the coupling elements in this realization are tunable, and no iris or coupling holes are needed to achieve coupling among resonators. As a result the new structure is easier to

A Ka-BAND INTEGRATED POWER DIVIDER Jim Ruxton. . Bolriet Technologies Inc. 150 Mill St., P.O. Box 53 Carleton Place Ontario, Canada K7C 3P3 E-PLANE and Ruediger Vahldieck.. ..Dept. of Electrical and Computer Engineering University of Victoria P.O. Box 1700 Victoria, B. C., Canada V8W 2Y2 ABSTRACT This paper describes the design, construction and performance of a millimeter wave power divider wh

A UNIFIED RIDGE STRUCTURE FOR EVANESCENT HARMONIC FILTERS: ANALYSIS AND APPLICATIONS A.M.K. Saad* MODE WIOEBANO ABSTRACT --------This paper present an accuate anlysis of various applica- ridge waveguide structure which is tions of a double antipodal loaded with different dielectric materials Design parameters , i.e. the cutofff frequencies of the TE11 and TE20 modes, equiventielent diellectric

CAD of Waveguide Low-Pass Filters for Satellite Applications Wolfgang Hauth, Reinhard Keller, Uwe Rosenberg * ABSTRACT Corrugated-waveguide low-pass filters are analysed by successive reflection coefficient transformations. The discontinuities are modelled by waveguide equivalent circuits, including interaction of higher order modes. The filter response is determined by TEm0-transfer func

VERY HIGH PERFORMANCE GaAs MICROWAVE MESFET POWER DEVICES G.P. Donzelli* ABSTRACT - C.Angione* - M. Cipelletti* - P. Mengoni* - E.M. Bastida** A new power FET topology is performance and manufacturing device use, the performances with 40% power added efficiency described which permits exceptional microwave characteristics. As an example of pratical of a class A-B 11 GHz, 1 W hybrid amplifier

BROADBAND FREQUENCY OOUBLER DESIGN BASED ON NONLINEAR GAAS FET MODELS Michal Odyniec * ABSTRACT The aim of this paper is to present analysis and design procedures for a broadband frequency doubler. Based on these procedures a simple circuit that achieved 6 dBm output signal in 8-18 GHz band with 10 dB conversion loss was built. Our circuit consisted only of two single gate FETs. Careful analy

DESIGN AND REALISATION OF HIGH POWER GaAs CW AND PULSED IMPATT SOURCES IN THE Ku BAND M. Berbineau- Barre ,C. Daile ,PA Rolland '" P. Arsene- Henry ** ,M. Calligaro Jllli:1II: 111: JIIIi: ABSTRACT This paper is mainly concerned with the optimization of high power CW and pulsed GaAs IMPATT diodes in the Ku band (12-18 GHz).The theoretical model used describes stationary or non stationary carrie

A 2 - 18 GHz CONTINUOUSLY VARIABLE 0 - 360° PHASE SHIFTER D. LEVY/A. NOBLET/Y. BENDER* ABSTRACT 360° The design and performance of a new hybrd vectorial 0 active phase shifter is presented. The originality of this circuit consists in using a single FET and high-pass and low-pass filters to provide the four 90 degrees phase shifted vectors instead of limiting passive couplers. The active c

A BROADBAND FET AMPLIFIER WITH AN E-PLANE MICROSTRIP IN INTEGRATING INSERT WAVEGUIDE TECHNOLOGY U. Meier, J.H. Hinken, W.Stenzl* ABSTRACT This fier nology easy paper with describes a GaAs-FET, advantages small a broadband low noise waveguide combining advantages of a planar of the integrating waveguide amplitechallows behaan gy (INWATE). viour. in a The with A new waveguide-to-micr

INVERTED-GATE GaAs MESFET CHARACTERISTICS Samir EI-Ghazaly * and Tatsuo Itoh* ABSTRACT: A non-coplanar MESFET, in which the gate is located at the bottom of the active layer, is studied. Its characteristics are simulated using an accurate two dimensional computer model which takes into account the non-stationary conditons associated with submicron-gate GaAs MESFET's. The potentially interesting c