13 GHz DIGITAL G.Paoli* ABSTRACT RADIO SYSTEM FOR URBAN AREAS and F. Riva* The new low capacity digital radio systems of the "R series" have been conceived and developed to meet the requirements of point-to-point links in urban areas. The capacities required for such systems are 2 to 8 Mbit/s for the European hierarchy and 1.5 to 6.3 Mbit/s for the USA hierarchy and are used to transmit telepho

THE USE OF MILLIMETRE-WAVES FOR BROADBAND LOCAL DISTRIBUTION R G Blake* ABSTRACT The use of mm-waves for local TV distribution is examined both at street level and for small town community coverage. Whilst for the former there is thought to be insufficient spectrum for contiguous coverage, for the latter a trial system is planned for 1988 in the UK using 29 GHz, GaAs technology. 

CROSSTALK SUPPRESSION FOR MODULATED SUBCARRIER MEASUREMENT SYSTEMS JORGEN SCHNEIDER, UWE G~RTNER AND BURKHARD SCHIEK ABSTRACT A double modulation technique to reduce both low frequency crosstalk and RF-crosstalk in modulated measurement systems has been developed. The modulation concept uses two double balanced mixers as modulators, which are driven by appropriate signals to yield a high crossta

SOME MEANS FACILITIES TO IMPROVE EXISTING MICROWAVE OF PREDISTORTION AND PRECODING METHODS DIGITAL RADIO SYSTEMS BY W. Lorek *), H. Bessai **) ABSTRACT We describe three methods to improve existing 16-QAM transmission systems. The first one suppresses the amplitude of quaternary baseband symbols during a certain part of its duration to get a simple digital predistortion instead of the usual

USE OF A SPATIAL FIELD TECHNIQUE FOR THE ANALYSIS OF ACTIVE MMICS M.G. Stubbs*, Y.L. Chow** and G.E. Howard** ABSTRACT The method of moments is applied for the first time to the active MMICs. A description of the procedure is presented and of two different amplifier configurations is compared with results. This spatial field technique can be applied to both monolithic elements and comp

-DESIGN AND TECHNOLOGY- OPTIMISATION FOR HIGH YIELD MONOLITHIC GaAs X BAND LOW NOISE J. MICHEL, AMPLIFIERS C.MAYOUSSE, ABSTRACT M. RENVOISE, F. SIRET, L. SYRIES (*) The purpose of this study is to demonstrate how an improved GaAs design technique associated with an optimised technology, can fulfill the low-cost, high yield objectives required for the industrial exploitation of MMIC

A FULLY-INTEGRATED. 0.5 WATT. 2 TO 6 GHz MMIC AMPLIFIER * B. Maoz, H. Badawi, J. Faguet, ABSTRACT and R.S. Pengelly A fully integrated 2-6 GHz, two-stage, 0.5 watt MMIC amplifier has been designed, fabricated and tested. This single-chip amplifier features a gain of 14.5 +/0.9 dB, an input VSWR better than 2:1 and an output power greater than 0.5 watt. Chip size is only 1.0 by 2.0 mm. Both sm

GaAs MMIC POWER FET AMPLIFIERS AT K-BAND 2 H-L. A. Hung, A. Ezzeddine, and H. C. Huang2 3 F. R. Phelleps, 2 J. F. Bass, 2 ABSTRACT K-band monolithic power GaAs FET amplifier modules have been developed. These single-ended modules provide a linear gain of 4.5 dB and output power of 27 dBm in the 17.7- to 20.5-GHz band. At 19 GHz, a balanced module has achieved an output power of up to 1.

1 TO 20 GHZ MONOLITHIC Patrice Abstract GAMAND*, Mark DISTRIBUTED FAIRBURN**, AMPLIFIER Claude USING GaAs MESFETS Jean-Christophe OR HEMTS MEUNIER* VARIN*, GHz monolithic FET amplifiers have been designed and approach is based on a detailed analysis of the and tne cut-off frequency of the transmission lines to reduce and to increase the bandwidth up to tne maximum capabilities of the FET' s.

A BROADBAND TTL CONTROL MMIC DUAL-GATE INTERFACE FET SWITCH MODULE WITH ON-CHIP R. Gupta*, M. Fu**, W. Baker*, and R. Edwardst ABSTRACT The design approach, modeling techniques, and measured performance of a monolithic GaAs dual-gate FET switch module with an on--chip TTLcompatible switch control circuit are presented. This self-bias switch circuit, with chip dimensions of 1.5 x 2.5 mm (