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A W-BAND (75 TO 110 GHz) BROADBAND MICROSTRIP PHASE SHIFTER
C. Nguyen, P. Yen
A W-BAND (75 TO 110 GHz) BROADBAND MICROSTRIP PHASE SHIFTER Cam Nguyen* ABSTRACT and Percy Yen+ This paper presents the design and performance of a W-band wideband microstrip 11.25-degree. l-bit phase shifter using PIN diodes and loaded line technique. State-of-the-art results of 0.9 +- 0.5 dB insertion loss and +-1.3-degree phase error over the 79 to 92-GHz range have been Only 1.5 mA per di
A COMPLETE "MULTI-GRADE SOLUTION" IN COAXIAL CONNECTIONS TO 50 OR 65 GHz
J. Botka, P. Watson
MICROWAVE PROPAGATION STUDIES
Y. Furuhama, J. Awaka
MICROWAVE PROPAGATION STUDIES Y. Furuhama* and J. Awaka** ABSTRACT Present status of microwave propagation research in Japan is presented. Three major fields, i. e. Terrestrial, Earth-space and Mobile propagation are extensively investigated. Multipath and rain effects, two major causes which degrade microwave propagation characteristics and countermeasures to reduce propagation impairments a
MICROWAVE ANTENNA TECHNOLOGY
T. Katagi
MICROWAVE ANTENNA TECHNOLOGY Takashi Katagi* ABSTRACT Recent microwave antenna technologies which are developed in Japan are reviewed. Main antennas which are practically used in various fields are described. The trends of antenna research works are also shown.
RESEARCH ON MICROWAVE AND M4-WAVE PASSIVE AT UNIVERSITIES
T. Yoneyama
RESFAlOI ON MICIOiAVE AR> ~-wAVE PASSIVE DEVICES AT lNIVERSITIES T. Ya1eyama* ABSTRJICT Research activities at Japanese universities are revied placing emphasis on transmission lines for integrated circuits, filters and dielectric resonators, couplers and junctions, material constant measurements, and analytical techniques.
MICROWAVE AND MILLIMETER-WAVE TRANSISTOR DEVICES
Y. Takayama
MICROWAVE AND MILLIMETER-WAVE TRANSISTOR DEVICES Yoichiro Takayama* ABSTRACT This paper will review the recent advances in microwave and millimeter-wave, especially above X-band, transistors and monolithic integrated circuits in Japan. GaAs and relatedcompound semiconductor devices including GaAs MESFETs, GaAs MMICs, two-dimensional electron gas transistors and heterojunction bipolar transis
MILLIMETER-WAVE MONOLITHIC INTEGRATED CIRCUITS
B. E. Spielman
MILLIMETER-WAVE MONOLITHIC INTEGRATED CIRCUITS B. E. Spielman* ABSTRACT This paper summarizes the progress, trends, and technical issues associated with monolithic millimeter-wave integrated circuit technology. Presented first is background information which sets forth a description of the opportunities which spur this activity, and a summary of the important technical challenges. The technic
U.S. GaAs DIGITAL IC TECHNOLOGY
P. T. Greiling
U.S. GaAs DIGITAL IC TECHNOLOGY Paul T. Grei I ing* , ABSTRACT GaAs digital IC technology has emerged from the research laboratory and made available for the microwave system designer GaAs foundries for custom ICs and digital components. Successful insertion in future microwave systems requires an understanding of the potential performance and limitations of the technology. This paper present
MMIC PROSPECTS IN MICROWAVE COMMUNICATIONS
F. Ivanek
MMICS, MODELLING, AND CAD--WHERE DO WE GO FROM HERE?
R. A. Pucel
MMICS, MODELLING, AND CAD--WHERE DO WE GO FROM HERE? R. A. Pucel * ABSTRACT During the past decade remarkable advances have been made in the integration of microwave circuits on semiconductor chips. This progress could not have taken place without the concomitant advances in the technology of planar circuits, modelling techniques, and computer-aided design (CAD) software. It is evident from dev
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