THE DEVELOPMENT AND USE OF AN ATE SYSTEM FOR ON-WAFER MICROWAVE CHARACTERISATION OF GaAs MMICS
B. J. Buck, I. G. Eddison
The design and operation of a measurement system intended for the automatic, on-wafer r.f. characterisation of GaAs monolithic microwave integrated circuits is described. Results are presented for an entire
2 inch wafer of S-band GaAs
minutes per chip.
ICS which have been measured at a rate of
3~