A theoretical model fitted to Schottky diode mixers design in the 0.53 THz range is developed. It allows the determination of the various contributions to the conversion loss and noise of a whole mixer system. It includes antenna mismatch to the incident radiations, impedance mismatch between the antenna and Schottky junction at the various involved frequencies, the intrinsic conversion process an

There is a growing interest in optically controlled microwave devices and systems. This paper is concerned with the design, fabrication, modeling and application of optically stimulated microwave PIN diodes. A microwave PIN device was modified to facilitate optical injection of carriers into the intrinsic region. The optical port transforms the PIN into a three terminal device. The device was char

This paper presents different parameters temperature. a temperature dependent behaviour version of the expression below room used to describe the noise behaviour of a MESFET. By applying this to the TEGFET case it is possible to demonstrate the relative contributions of the to the low noise at temperatures 

A calculation of the potential, field and electron concentration distributions in the structure of high-mobility field-effect transistor (HEMT) as a functions of gate voltage at room temperature has been performed. The results show that degenerate statistics are very important for modeling of HEMT-structures. It is shown, that the charge density in the channel increases linearly with gate voltage.

The reliability of power FET's is strongly affected by the local uniformity of the active layer. Therefore an implanted layer has been optimized for 2.4 mm power devices. The main features of the devices are a 0.7 µm gate length, a 50 µm unit gate width and a via-hole source grounding. An output power of 1 W at 18 GHz with 6 dB linear gain has been measured. This result is the best ever reported f

A 2-dimensional FEM Code is developed to characterize the GaAs MESFET device with sub-micron gate length. Bilinear rectangular elements are adopted to simplify the input and output data manipulation. The energy transport effect and the substrate effect are also included. 

A novel high-yield technology is described which permits the production of both high-gain and extremely low-noise FET devices. For its high yield and the simplicity of the process the technique is very useful in the monolithic circuit fabrication. When high power devices have to be produced, the technique offers the advantage of not requiring interdigitated structures. FET devices with 1.25 dB N.F

The present paper is an extension of previous scattering analyses, using a particular two-layer model for the structure of the ground. The scattering of a plane wave incident on the earth due to a buried cylinder is considered using an integral equation approach. The resulting integral equation is solved for the unknown electric field inside the scatterer. Further, the scattered field in the air i

A full-wave mode matching analysis is applied to a slow-wave coplanar waveguide with finite conductor thickness on a lossy substrate. The time domain response is computed by knowing the accurate frequency domain data. The analysis is for the designs of high speed digital and wideband analog integrated circuits. 

A surface and/or applied factors equivalence formulation inside for the problem waveguides of scattering by material is conducting obstacles is presented. The method quality to the calculation of dielectric of resonant inside frequencies metal and radiation and resonators cavities waveguides.