HIGH POWER, HIGH EFFICIENCY LP. MOCVD InP GUNN DIODES FOR 94GHz
M. A. di Forte-Poisson, G. Colomer, C. Brylinski, J. P. Duchemin, F. Azan, J. Lacombe
High power and high efficiency InP Gunn diodes which were made from layers grown by LP-MOCVD have been developed in the millimeter-wave range. The Gunn diodes, processed using the integral heat sink technique have delivered up to 100 mw cw output power with 2,5 % efficiency at 94GHz, while average power levels in excess of 90 mw were obtained at 94GHz. The Gunn diodes operated at a bulk temperatur