IMPROVED PERFORMANCE OF HIGH VOLTAGE, MICROWAVE POWER, STATIC INDUCTION TRANSISTORS
R. Regan, A. Cogan, S. Butler, I. Bencuya, P. Haugsjaa
IMPROVED PERFORMANCE OF HIGH VOLTAGE, MICROWAVE POWER, STATIC INDUCTION TRANSISTORS R. Regan, * A. Cogan,t I. Bencuya, * P. Haugsjaa*
S. Butler,*
ABSTRACT The performance of static induction transistors (SITs), fabricated with 10.5-µm pitch (gate-togate spacing) has been reported previously.[1] This presentation will discuss the improvements in performance that are achieved when the pitch is fur