}\';~3 ?Af(CII on- DUAL-l ,,\; .JS F!ERrtlfr J.:~ l'iO GLA'rO~ nen-Pei ,JiangZi-Yu 'Yanc; A1BS'I'RAC'1' The fact that a dual-mode ferrite modulator (DMFM) has been successful in the channel-combining technique for the radar error signal promotes further research on the mechanism of the DMFM. In the past, there were only a few papers which only briefly presented basic principle of the DMF

A NEW MIC 4-PORT CIRCULATOR W.John, G.Boeck ABSTRACT Based on the well known microstrip-slot-coupler [1, 2] an interesting nonreciprocal extention is proposed. It is shown that a 4-port circulator can be obtained if an additional ferrite substrate is underlayed on the slot side (Fig.1a,b). The S-parameters of this new device are derived and the electrical properties are discussed. First experi

A NEW KIND OF RADIAL S1UB AND SCME APPLICATIONS Mauro de Lima Coimbra* ABSTRACT: A slight different kind of radial stub is presented in this work which is, basicaly, a triangular taper on the planar transmission line being used (e.g. microstrip, stripline, etc.). Its shape is an isosceles triangle (as the Greek letter "delta"). The simplification was made just to allow the synthesis method to

AN ABSORPTIVE ATTENUATOR WITH OPTIMIZED PHASE RESPONSE J. P. Starski, B. Albinsson;', ABSTRACT An absorptive attenuator with optimized phase response has been designed. Computer generated phase variation is limited to 11° within the attenuation range of 0-40 dB and bandwidth of 20%. Measured phase variation is ±15° with attenuation range of 0-40 dB and flatness ±1 dB. The measured bandwidth

DESIGN OF MIC BROADBAND LOADS AND ATTENUATORS L. J. Peter Linner*, Hans B. Lunden**, and Mats A. Larsson* ABSTRACT Design tables for broadband terminations are presented. The termination circuits consist of one or two /4 transmission lines in cascade loaded with a resistance in series with an open circuit stub. Since no holes in the substrate or metallic connections with the ground

HIGH GAIN, TEMPERATURE COMPENSATED EHF GALLIUM ARSENIDE MESFET AMPLIFIER J. Arno1d* and C.H. Ox1ey+ ABSTRACT This paper describes the development of a state of the art high gain (32 ± 0.5 dB), low noise GaAs MESFET amplifier operating over the frequency range 27.5 to 30 GHz for use in European high capacity 30/20 GHz satellite transponders. The amplifier utilises 0.3µm gate length MESFE

MONOLITHIC GaAs WIDEBAND LOW NOISE RLC FEEDBACK AMPLIFIERS C. E. Weitzel and D. Scheitlin ABSTRACT and three stage RLC feedback GaAs monolithic amplifiers were designed, fabricated and tested. The fabrication process uses two trics, polyimide and silicon nitride, to achieve low capacitance metal cross overs and high capacitance per unit area capacitors. The amplifiers had gains 8 dB/stage wit

A MICROWAVE DISTRIBUTED MESFET MIXER Tang O.S.A.* and Aitchison C.S.* ABSTRACT A novel microwave broadband active mixer or frequency converter using GaAs MESFET is presented. The concept proposed is believed to be new and is based on the concept of distributed amplification. Closed form expressions for the Conversion Gain are given. 

NOISE IN MICROWAVE AND MILLIMETER-WAVE Pt-GaAs SCHOTTKY DIODES H. Zirath *, S. Nilsen, * E. Kollberg *, T. Andersson, ** W. Kelly *** ABSTRACT and bias dependent noise of dcGaAs diodes. The measurements are performed at room temperature and at cryogenic (20 K) temperatures. It is shown, that the noise can be described as consisting of two parts. One contribution is frequency depe

A SYSTEMATICAL DESCRIPTION OF DIFFERENT MIXER CLASSES IN A SYNTHESIS-DIAGRAM B.SchUppert ABSTRACT A synthesis diagram for the conversion loss of mixers is presented, that involves 29 different harmonic-impedance classes and 29 different mixing-product-impedance classes, leading to 841 different mixer configurations. The impedance data taken into consideration are assumed to be wi thin 2 Oh