RECENT DEVELOPMENTS IN RF OVERLOAD MECHANISMS, BURNOUT AND RELIABILITY OF LOW NOISE GaAs FET AMPLIFIERS
H.J. Finlay, B.D. Roberts, R.F.B. Conlon, D. Standing
RECENT
DEVELOPMENTS
IN RF OVERLOAD MECHANISMS, BURNOUT AND RELIABILITY
OF LOW NOISE H.J. Finlay*,
GaAs FET AMPLIFIERS B.D. Roberts*, R.F.B. Conlon*, D. Standing+
ABSTRACT GaAs FET amplifiers are frequently subjected to RF overload in radar and communication systems. To satisfy reliability requirements, a comprehensive study of RF overload mechanisms is described which relates to catastrophic