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A NEW METHOD FOR CARRIER ACQUISITION IN SUPPRESSED CARRIER DIGITAL MICROWAVE RADIO
I. Frigyes, T. Berceli, Z. Szabó
A NEW METHOD OIGIT~L FOR CARRIER RADIO ACQUISITION IN SUPPRESSED CARRIER MICROWAVE I.Frigyes, T.Berceli, Z.Szab6* Abstract Based on the fact that the spectrum of a scrambled bit sequence is independent on the statistical properties of the signal to be transmitted, a new device, the spectrum discriminator is introduced. This device can be used as a very effective acquisition aid in the car
DIRECT SATELLITE BROADCASTING - LONGTERM-STUDY ON VIDEO TRANSMISSIONS AT 11.6 GHZ USING THE OTS SATELLITE
C. Dosch
DIRECT SATELLITE AT 11.6 Christoph BROADCASTING - LONGTERM-STUDY ON VIDEO TRANSMISSIONS GHZ USING THE OTS SATELLITE Dosch ABSTRACT In the frame work of a test programme established by the European Broadcasting Union, long-term studies (almost 3000 hours of transmission) have been carried out using the OTS-Satellite to investigate the influence of the atmosphere on a frequency-modulated TV signa
HYBRID-MICROSTRIP MILLIMETRE WAVELENGTH MIXERS
R.E. Scarman, P.L. Lowbridge, T.H. Oxley
HYBRID-MICROSTRIP MILLIMETRE WAVELENGTH MIXERS R.E. SCARMAN, P.L. LOWBRIDGE AND T.H. OXLEY * ABSTRACT This paper describes the use of hybrid-open microstrip technology to produce components capable of operating over the frequency range 40 to 110GHz. Harmonic mixers for millimetric standards and instrumentation use are described together with broadband balanced mixers. It is shown that balan
A FIN LINE FERRITE ISOLATOR AND CIRCULATOR FOR THE R-BAND
A. Beyer, I. Wolff
A FIN LINE FERRITE ISOLATOR AND CIRCULATOR FOR THE R-BAND Adalbert Beyer and Ingo Wolff * ABSTRACT First approaches of a fin line Y-circulator and a fin line resonance isolator are described, and experimental data of the performance are reported. The Y-circulator consist of a antipodal fin line Y-junction with three impedance transformers and a ferrite sphere as magnetically active eleme
A COMPREHENSIVE ANALYSIS OF QUASIPLANAR WAVEGUIDES FOR MILLIMETER-WAVE APPLICATION
L.-P. Schmidt
A COMPREHENSIVE ANALYSIS OF QUASIPLANAR WAVEGUIDES FOR MILLIMETER-WAVE Lorenz-Peter Schmidt APPLICATION ABSTRACT Quasiplanar waveguides are analyzed which consist of a thin, partially metallized dielectric substrate inserted in the E-plane of a rectangular waveguide. Several slots or strips in symmetric or non-symmetric positions are allowed on each substrate surface. The analysis is based o
LOW-INSERTION-LOSS FIN-LINE FILTERS FOR MILLIMETRE-WAVE APPLICATIONS
F. Arndt, J. Bornemann, D. Grauerholz, R. Vahldieck
LOW-INSERTION-LOSS FIN-LINE FILTERS FOR MILLIMETRE-WAVE APPLICATIONS Fritz Arndt, Jens Bornemann, Dietrich Grauerholz and Rudiger Vahldieck ABSTRACT A design theory is described fin-line gap widths over the theory includes both higher thicknesses of the dielectric egy synthesis method yields onator-type fin-line filters band frequencies chosen are minimum insertion-losses in 0.5 dB
DESIGN OF FIN-LINE TAPERS, TRANSITIONS, AND COUPLERS
A.M.K. Saad, K. Schünemann
DESIGN OF FIN-LINE TAPERS, TRANSITIONS, AND COUPLERS Abdel Megid Kamal Saad, Klaus Schunemann ABSTRACT: A general design procedure is outlined which is applicable to arbitrary fin-line taper configurations, various transitions from fin-line to microstrip, and couplers with two or more slots. The only input data are the cutoff wave numbers of the fundamental fin-line modes. The procedure
OCTAVE-BAND FIN-LINE HYBRID
H. El Hennawy, R. Knöchel, K. Schünemann
OCTAVE-BAND FIN-LINE Hadia El Hennawy*, HYBRID Reinhard Knochel**, Klaus SchUnemann* ABSTRACT: A nearly octave-band fin-line hybrid is described. It shows 0.5 dB insertion loss and more than 20 dB isolation from 23 to 40 GHz. A simple design theory and some applications are also given.
A 30 GHz FET-Oscillator using Fin-Line Circuitry
H. Meinel
A 30 GHz FET-Oscillator using Fin-Line Circuitry H. Meinel Abstract: The rapid progress in the semiconductor field has rendered possible the utilization of GaAs Field Effect Transistors for oscillator applications in the mm-wave range. Recently quasi planar line structures, like fin-line, have been investigated. Based on this know-how, a 30 GHz fin-line FET-Oscillator has been developed. 3 mW
A WIDE - BAND, HIGH POWER. LINEAR TRANSISTOR AT 4 GHz
G. Gimine, J.P. Manhout, M. Bonis, P. Paris
A WIDE - BAND, HIGH POWER. LIN&\R Truu~SISTOR AT 4 GHz G. GIMINE~ JP. MANHOUT~ M. BONIS+ P. PARIS+ A~S~Q1 This paper describes the state of the art reached with silicon linear bipolar transistors in the 4 GHz frequency range. Designed with a five gigahertz process, the device, internally input and output matched is able to deliver 2.5 W of wide band linear power in the 3.7 to 4.2
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