MULTIPORT LUUPBD ELEMBNT CIRCULATORS r ~ U. Kitlinski ABSTRACT Up to now lumped element circulators with more ports have been built only as a cascade connection of 3-port circulators. Now, a new conception of the single junction multiport circulator which contains n-port nonreciprcoal junction is presented. The immitance matrices of the ideal nonreciprocal junction are derived and the structu

RESULTS OF TSD CALIBRATED SCATTERING PERFORMED ON A COMMERCIAL ANA PARAMETER MEASUREMENTS Ross A. Speciale* ABSTRACT The Through-Short-Delay (TSD) calibration method has been applied, for the first time, to the calibration and correction of measurements perfonned on a commercial automated network analyzer (ANA), located at the National Bureau of Standards, Boulder, Colorado. The processing of

FREQ.UENCYERRORS IN su:B-NYQ.UIST SAMPLINGOF A SINE WAVEIN THE PRESENCE OF NOISE OR FREQ.UENCYMODULATION M. Sarhadi and C.S. Aitchison ABSTRACT In this paper frequency errors due to sub-Nyquist sampling of a sine wave in the presence of noise or frequency modulation are analysed. The results are computed for various input signal-to-noise ratios, input noise bandwidths and the frequency deviation

MICROWAVE MOISTURE MEASUREMENT SYSTEJl1 J.M. Ozamiz, S.J. Hewitt ABSTRACT A microwave monitoring The system moisture-measuring is described. is insensitive is used. system based on phase (dielectric constant) to amplitude variations mechanically configuration integrated with a production line. and is being A strip-line sensor It has been designed having in mind a particular applicatio

STUDY ON RELIABILITY OF LOW NOISE GaAs MESFETs T. Suzuki, M. Otsubo, T. Ishii and K. Shirahata ABSTRACT Analysis is made with regard to the failure mode of GaAs FETs and cause of the failure is investigated. It is fundamental for improving reliability of GaAs FETs to suppress the localized high electric field and the gate metal migration. The deep gate recess and the thick gate structure

BROAD AND NARROW-BAND FREQUENJY DIOORIMINATORS FIELD R.S. EFFECT Pengell~~ TRANSISTORS USINJ DUAL GATE GaAs ABSTRPCT The use of a dual-gate gallium arsenide FET as a broad-band (and narrow-band) frequency discriminator is described. Such a circuit has use in IFM systems and phase locked loops respectively. The discriminator employs a GaAs FET amplifier used as a limiter followed by a dual-gate

A SELF~OSCILLATING GAIN. DUAL GATE MESFET X-BAND MIXER WITH 12 DB CONVERSION Christos TSIRONIS, Rainer STAHLMANN, Frederik PONSE+ ABSTRACT An x-band receiver stage including preamplifier, mixer and local oscillator has been realized by a dual gate GaAs MESFET in common source configuration. The conversion gain for a signal frequency of 10 GHz and an I.F. of 1GHz 12 dB by appropriate matchin

THE CONVERSION GAIN AND STABILITY OF MESFET GATE MIXERS GUnther Begemann*, Andreas Hecht** ABSTRACT The conversion gain of MESFET gate mixers has been calculated based on the directly measurable S-band Y-parameters, respectively. The analytical results show that parasitic mixing products can be neglected and that the reactions can be suppressed by shorting the IF at the gate and the signal,

SWITCHING & FREQUENCY CONVERSION USING DUAL-GATE FETs W. C. Tsai, S. F. paik, and B. S. Hewitt ABSTRACT Dual-gate FETs may be used for a variety of circuits designed for non-amplifying functions, which have been performed in the past by two-terminal devices. Examples of dual-gate FET circuits described are: a high-speed broadband switch, a high-speed phase modulator, and a frequency up-converte