13 GHz FET NEGATIVE RESISTANCE 0.5 W AMPLIFIER '.Jy S. Nicotra * ABSTRACT A two~stage 13 GHz negative resistance amplifier utilizing commercially available GaAs FETs in a sealed container has been realized. The AM amplifier to PM performs cf a 0.5 less W output than 3D/dB power, in the a 16 dB linear instantaneous gain, an conversion bandwidth of 500 MHz. The estimated MTTF exceeds 10 hours

12 GHz VARIABLE-GAIN AMPLIFIER WITH DUAL-GATE GaAs FET FOR SATELLITE USE G. Ohm, J. Czech ABSTRACT The performance of a single-stage variable-gain amplifier at 12 GHz is described, including intermodulation behaviour. The amplifier has a gain control range of 26 dB and a gain flatness of ~ 0.5 dB over the 800 MHz bandwidth. Some fundamental features of the dual-gate FET such as noise, ph

PREMA'roHED AND MONOLITHIC AMPLIFIERS COVERING 8-18 GHz R.S. pengelly, J. Arnold, J. Cockrill, M.G. Stubbs~~ ABSTRACT The latest gallium arsenide field effect transistors designed for low small signal applications up to Q-band exhibit large /S21/2, making the design of high gain, wideband amplifiers easier. High gains over relatively large bandwidths can be obtained with the devices tuned fo

NEW APPROACH TO DESIGNING BROADBANDGaAs FET AMPLIFIERS SIGNAL GAIN PERFORMANCE FOR OPTIMUM LARGE- Christen Rauscher and Harry A. Willing ABSTRACT An accurate direct method is described for designing broadband GaAs FET amplifiers for optimum power gain performance. The theoretical background of the approach together with experimental verification is given. A power amplifier example is included

A HIGH POWER 15GHz GaAs FET I. Drukier, P.C. Wade Bnd J.W. Thompson* ABSTRACT Power performance results at 15GHz are presented for 2.4mm and 4.8mm devices. An output power 2.3 watts was achieved at 4dB gain from the 4.8mm device. A novel selfaligned technique which gives low gate resistance was used achieve this result. Furthermore, excellent pellet power scaling allows combining of dev

A RELIABILITY STUDY OF POWER GaAs FETs I. Drukier ABSTRACT these and J. F. Silcox, Jr.* Accelerated devices temperature The activation are related life tests on power GaAs FETs have shown be reliable components. At an operating of 125°C a MTTF of 4 x 10^6 hours is predicted. energy of this process is 1.8eV. Failures to the gate. to 

FLIP-CHIP MOUNTED GaAs POWER FET WITH IMPROVED PERFORMANCE IN X TO Ku BAND Y.MITSUI, ABSTRACT A GaAs power MESFET with a new structure, which allows extremely reduced source inductances and minimized thermal resistance, has been developed. In the structure, the chip with metal posts plated on the source, drain and gate pads is connected directly to the package with no wire. Best results obtai

HIGH POWER X-BAND GaAs FIELD EFFECT TRANSISTORS B. S. Hewitt, R. C. Ellis, R. P. Thomas, R. M. Healy, and M. Benedek ABSTRACT Design considerations and processing techniques related to high power X-band GaAs field effect transistors will be presented. Particular emphasis will be placed on the problems associated with common lead inductance, gate-drain breakdown voltage and thermal resistance. The

A 35 GHz Communication Link for Railway Applications H. Meinel, A. Plattner and R. Breitschadel * Abstract: Modern railbound traffic has the need for a communication system between traffic control center and every single train, being on the line at the time. High data rate transmission and high selectivity of orientation should be inherent. This can be done, using 35 GHz lineof-sight trans

A HIGH PERFORMANCE 8 GHz, 8 PSK DIGITAL RADIO Giuseppe G. Russo* Paul P. Hartmann* ABSTRACT Rapid growth and modernization of microwave communications is currently taking place in the commercial and military environments. Much of this growth is being accomplished through digital transmission and calls for efficient utilization of frequency spectrum allocated for LOS communications. As th