RESONANCES OF A "PILLBOX" DIELECTRIC RESONATOR M. Verplanken and J. Van Bladel* ABSTRACT Resonant frequency, quality factor and field cussed for a circular-cylindrical dielectric plots are disresonator. These 00. quantities are calculated in the limit Er + The method is a perturbation technique based on an expansion in the (small) parameter (1/sqrt(Er)). Data are shown for the lowest mod

APPROXIMATION AND CAVITIES OF THE FIELD COMPONENTS OF TE AND 'I'M MODES IN WAVEGUIDES WITH GENERAL CROSS SEcrION P.J. Luypaert, A. Van de Capelle, (°)£. Van Lil,(g)W. Ranson (+) ABSTRAcr This paper shows that the field components of TE and TM modes of waveguides and cavities with general cross section can be approximated by a power series consisting of a separeble solution and nonseparable

COMPUTER MODELLING OF GaAs F.E.T.s C.R. BREWITT-TAYLOR, P.N. ROBSON, J.E. SITCH ABSTRACT A fast two dimensional computer simulation to model the transient and steady state performance of GaAs FETs has been written. Results from the simulation are used to describe some important features of operation including typical electric field and mobile charge distributions and the variation of the

DESKCOMPUTER SIMULATION OF FET.s INCLUDING NON STATIONARY ELECTRON DYNAMICS B. CARNEZ, A. CAPPY, A. KASZINSKI and G. SALMER . ABSTRACT The aim of this work is to set up a deskcomputer model of FET.s taking into account the non stationary electron dynamics effects which occur when using submicrometer gate devices. For this purpose, explicit analytical formulas of the instantaneous velo

RELIABILITY METALLISATION INVESTIGATIONS OF GaAs POWER FETs WITH ALUMINIUM GATE P.M. White, B.L. Hewett and J.A. Turner ABSTRACT Accelerated life tests on GaAs power FETs have revealed two failure mechanisms. The first, associated with Au/Al interaction at the bonding pads, is gate void formation for which the estimated activation energy of 2eV in air ambient gives an extrapolated MTTF at

FAILURE MECHANISMS AND RELIABILITY OF LOW-NOISE GaAs FETs J. C. Irvin and W. O. Schlosser ABSTRACT A comprehensive reliability study of low noise GaAs FETs is presented. It involves over 1500 devices and 1,500,000 device hours of aging and various conditions of elevated temperature, bias and humidity. The major findings are: a) The Al gate mechanisms. Proper b) Unbiased aging metallization is

A K-BAND ION IMPLANTED GaAs FET Chiung T. Li, Philip T. Chen, Patrick H. Wang * ABSTRACT An ion-implanted, 0.5 micron gate GaAs MESFET designed for K-band (18-26 GHz) applications is described in this paper. Silicon implantation was used to form both the channel and the N+ contact layers. The device has 9.8 dB gain at 18 GHz and its extrapolated fmax is about 80 GHz. At 25 GHz, it achiev

SELF-ALIGNED GaAs POWER MESFET'S FOR X-BAND+ Pierre BAUDET, Michel BINET, Dominique BOCCON-GIBOD, Laszlo HOLLAN* ABSTRACT More than 1 Watt output power has been achieved at 10 GHz with GaAs MESFETs which are produced using a self-alignment technique. Principal improvements in performances are due to an increased maximum operating voltage of the Schottky diodes. This is obtained with a

MICROWAVE ACOUSTIC DEVICES D.P. Morgan Abstract. Acoustic waves have several attractive features for device applications. Low velocities lead to compact devices. Use of crystalline materials gives low propagation losses and good reproducibility and stability. Surface acoustic waves offer in addition exceptional versatility, owing to accessibility of the propagation path. The wide variety of devi

PROCESSING CIRCUITS REQUIREMENTS FOR MASS PRODUCTION OF MICROWAVE HYBRID INTEGRATED M. FACHE - J. JOLY ABSTRACT The works undertaken by L.T.T. to master the different operations for low cost and mass production of MIC (in TO 8 package) components are described. A certain number of devices representative of the whole of microwave components one can realize in MIC technology were selected.