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GENERATION AND USE OF COMPOSITE SUBNANOSECOND WAVEFORMS FOR MEASUREMENTS FROM 0.4 TO l8 GHZ
H.M. Cronson
GENERATION FROM Harry AND USE OF COMPOSITE SUBNANOSECOND WAVEFORMS FOR MEASUREMENTS 0.4 TO l8 GHZ M. Cronson ABSTRACT A new generator is described which supplies a single subnanosecond waveform for measurements over the entire 0.4 to l8 GHz range. The very large instantaneous bandwidth is obtained from a composite waveform made up of quasi-impulse and RF burst. A 20 dB attenuation measuremen
INFLUENCE OF STRONGLY DISPERSIVE NETWORKS IN A MICROWAVE INTERFEROMETER UNDER NON-STATIONARY CONDITIONS
T. Guldbrandsen, L.D. Nielsen
CRYOGENIC CHARACTERISTICS OF MILLIMETRE WAVELENGTH SCHOTTKY BARRIER DIODES
D.R. Vizard
CRYOGENIC CHARACTERISTICS OF MILLIMETRE WAVELENGTH SCHOTTKY BARRIER DIODES D.R. Vizard ABSTRACT High quality millimetre various doping levels were The temperature dependence theory. Factors relevant a cryogenic mixer utilizing wave measurements of mixer compared with the theoretical wavelength GaAs Schottky barrier diodes of measured over the temperature range 12°-300 K. of various diode parame
DIELECTRIC LOSS MEASUREMENTS BELOW 15 KELVIN BY USING SUPERCONDUCTING MICROWAVE RESONATORS
W. Meyer
DIELECTRIC LOSS MEASUREMENTS MICROWAVE BELOW 15 KELVIN BY USING SUPERCONDUCTING RESONATORS by W. Meyer ABSTRACT: The paper deals with the theoretical and practical investigation of superconducting Nb3Sn-helical-resonators with quality factors greater than 10^8 which allow the determination of dielectric loss tangents in the range of 0.1 to 10GHz and below 15KHz with an absolute accuracy
RESONANT FREQUENCY OF SUPERPOSED DIELECTRIC RESONATORS: APPLICATION TO THE DETERMINATION OF THE LOCAL DIELECTRIC PERMITTIVITY OF M.I.C. SUBSTRATES.
M. Clapeau, P. Guillon, Y. Garault
RESONANT FREQUENCY OF SUPERPOSED DIELECTRIC RESONATORS: APPLICATION TO THE DETERMINATION M. CLAPEAU, OF THE LOCAL P. GUILLON, DIELECTRIC ~ PERMITTIVITY OF M.I.C. SUBSTRATES. Y. GARAULT ABSTRACT Several methods have been described to measure the permittivity of dielectric substrate, and all used the complete area of the sample and so give an average value of this parameter. But in the
THEORETICAL AND EXPERIMENTAL RESULTS OF A DISTRIBUTED SERIAL TO PARALLEL AND PARALLEL TO SERIAL CONVERTER FOR GIGABIT RATES
R. Schwarte, B. Brinkmeier, J. Fischer, H. Koppenhöfer, K.H. Narzinski, R. Sinning
THEORETICAL TO PARALLEL AND EXPERIMENTAL AND PARALLEL RESULTS OF A DISTRIBUTED SERIAL RATES TO SERIAL CONVERTER FOR GIGABIT R. Schwarte, B. Brinkmeier, Narzinski, R. Sinning~ ABSTRACT J. Fischer, H. Koppenhofer, K. H. This paper presents experimental and theoretical results of an application of the SSL-principle (Series-gate Sampling Line) to the regeneration of fast digital signals.
CIRCUIT TECHNIQUES FOR GIGABIT/S DIGITAL COMMUNICATION SYSTEMS
J.B. Coughlin , R.G. Harbott , J.B. Hughes, F.W. Siegert
CIRCUIT TECHNIQUES FOR GIGABIT/S DIGITAL COMMUNICATION SYSTEMS J.B. Coughl~n . (1) , R.G. Harbott (1) , J.B. Hughes, (1). F.W. S~egert (2) ABSTRACT This paper describes how mono1ithical1y integrated transistor pairs are used as hybrid circuit components to produce Gbit/s performance in digital communications equipment. The transistor technology results in a peak fT of 5GHz and inc
DEMULTIPLEXER USING FAST HYBRID INTEGRATED ECL-GATES FOR 1 GBIT/S PCM SIGNALS
R. Petschacher, P. Russer
DEMULTIPLEXER USING FAST HYBRID INTEGRATED ECL-GATES FOR 1 GBIT/S PCM SIGNALS Reinhard Petschacher and Peter Russer ABSTRACT This paper describes a demultiplexer combined with a clock regenerator for 1 Gbit/s PCM signals. The demultiplexer divides the incoming signal into four parallel 250 Mbit/s channels using fast hybrid integrated ECL-gates with rise time of less than 400 ps. All clock signals
SUBNANOSECOND OPERATION OF A MICROSTRIP OPTOELECTRONIC SWITCH
R. Castagné, R. Laval, S. Laval, A. Meriau
SUBNANOSECOND OPERATION OF A MICROSTRIP OPTOELECTRONIC SWITCH . R. Castagne, R. Laval, S. Laval, A. Meriau Abstract.Experimental results and a theoretical model concerning optoelectronic switches are reported. These devices mainly consists in a microstrip line, deposited on a high resistivity semiconductor. The upper strip has a break which can be illuminated by a laser pulse. The latter
ULTRA HIGH SPEED COMPONENTS FOR MICROWAVE MODULATORS
B. Boittiaux, Y. Becquelin, G. Forterre, J. Marcoux
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