PRECISION APPROACH MONITORING AND GUIDANCE USING INTERFEROMETER TECHNIQUES A.J. Lambell * and R.P. Vlncent . + ABSTRACT The PAIR (Precision Approach measures the position of aircraft Interferometer Radar) system accurately in the airfield approach sector. A ground-based interrogator transmits a conventional SSR code. Aircraft transponder replies are received by an azimuth and elev

DOPPLER DIRECTION SENSE MODULE John C. W1ll1ams. '* . . ABSTRACT A novel method of incorporating direction sense into a Doppler radar module, integrated with a circulator, is described. It uses the properties of the isolation signal in microstrip circulators and is accomplished without any increase in substrate size or addition of any complicated circuitr~ Although the technique is demonst

A 3 GHz RADAR BEACON ("RACON") USING A MICROWAVE ACOUSTIC DELAY LINE D. ABADIEx - M. DE VECCHIS - J. PUYHAUBERT+ ABSTRACT The design criteria for a S band Radar Beacon responding at the sole frequency of the interrogating radar are given. A microwave acoustic delay line is used to create the response of the beacon and the capability of encoding this response by a proper design of the delay lin

SIMPLE, EFFICIENT, SELF-STARTING TRAPATT OSCILLATORS P.A. Blakey ABSTRACT A simple new TRAPATT oscillator circuit is proposed. Large signal computer simulation is used to establish typical performance characteristics The simulation results enable areas of potential systems applications to be identified. 

A COMPARISON BETWEEN 20:1 X-BAND GaAs IMPATT DIODES P W Huish* AND 5:1 OOPING RATIOS FOR HIGH EFFICIENCY ABSTRACT High efficiency X-band GaAs IMPATT diodes with doping ratios of 20:1 and 5:1 are compared using hybrid coaxial-waveguide circuits. Both doping ratios yield diodes which show a factor of two increase in output power and efficiency when compared with similar uniformly doped diodes. A

KA-BAND SOLID STATE POWERCOMBINING AMPLIFIER Franklin J. Bayuk and Jorg E. Raue ABSTRACT Solid in the multiwatt range have Both GaAs lo-hi-lo profile diodes, and Si double drift diodes are utilized in an amplifier which has an output power in excess of 5 watts at 37 GHz. The total amplifier gain is 33 dB and the 1 dB bandwidth exceeds 700 MHz. The amplifier features 5 stages, 3 of which operate i

FIRST ACHIEVED HAVING 30 % P-N JUNCTION MTTF OF 1011 HOURS H. Sawano, T. Ishii, GaAs Hi-La IMPATT DIODES K. Nishitani, S. Mitsui and K. Shirahata ABSTRACT By improving the carrier profile of a P-N junction GaAs IMPATT diode with a Hi-Lo structure, an efficiency of 30 %, which is comparable to that of an excellent pt Schottky barrier type, has been first achieved. The diode showing the exce

ViARITIME AND AERONAUTICAL SATELLITE NAVIGATION SYSTENS J. Litton Abstract This paper includes a brief survey of the generic types of radio tion aids, including satellite navigation; then a more detailed the TRANSIT and NAVSTAR systems, thus encompassing the principal mental and operational satellite navigation systems. navigareview of develop- The precision and accuracy of these systems, thei

THE ELLIPTIC MICROSTRIP RING RESONATOR J.G. Kretzschmar* ABSTRACT The characteristic equation for the resonant modes in a confocal elliptic microstrip ring resonator is derived. Numerical results for the dominant mode are given as a function of the dimensions of the confocal elliptical boundaries. 

DESIGN , MEASUREMENTAND APPLICATION OF LUMPED ELEMENTS UP TO J-BAND R.S. Pengelly* and D.C. Rickard* ABSTRACT Lumped-element design, fabrication and characterization has been extended for MIC requirements up to l8GHz. Spiral or loop inductors and overlay or interdigital capacitors have been measured at appropriate frequencies leading to satisfactory equivalent circuits. Variations in parasiti