NOVEL LARGE SIGNAL AMPLIFIER S-PARAMETER DESIGN MEASUREMENT TECHNIQUE AIDS GaAs POWER Robert A. SOARES ABSTRACT This paper describes a method for obtaining the microstrip circuit source and load impedances which permit a certain transistor gain/power load performance to be realised. A conventional power test bench, a small signal network analyser and a simple computer program are used, an

DESIGN OF LINEAR GAAS FET AMPLIFIERS By W.M. Kelly, J.G. de Koning, J.W. Monroe, H. Tokuda; Division, Hewlett-Packard Company, Palo Alto, Microwave Semiconductor 94304 California Abstract A newly developed technique is described for maximizing one dB com~ pression output power of a microwave amplifier across practical bandwidths. gain compression characteristics at X-band of a packaged GaAs FE

AN EXPERll1ENTAL EVALUATION OF X-BAND MIXERS USING DUAL-GATE GaAs MESFETS S. C. Cripps, O. Nielsen, D. Parker and J. A. Turner ABSTRACT Experimental results are presented for X-band GaAs MESFET mixers using a dual-gate device. This device combines high conversion gain and low noise operation with the convenient feature that the RF and local oscillator signals can be applied to the separate

DESIGN FET AND PERFORMANCE OF LOW NOISE C - AND X - BAND GaAs MIXERS B. LORIOU * and J.C. LEOST- ABSTRACT Different configurations of MESFET mixers are compared in the 6 GHz band for intermediate frequencies ranging from 30 MHz to 1.5 GHz. Conversion gain of 10 dB associated with 4 dB SSB noise figure have been achieved. Results will be presented concerning a balanced module made up of two

A GaAs FEr DESIGNED FOR MAXDlUMFLEXIBILITY IN ELECTRICAL PERFORMANCE M. Bujatti and M. Massani ABSTRACT A simple process has been developped which enables us to produce GaAs FET's with enough flexibility in the geometry to adjust for a wide range of circuits requirements. In order to gain control on the active layer we used ion implantation on semi-insulating substrates. Results obtained an e

OF THE NOISE PARAMETERS OF THE GaAs MESFET ON TECHNOLOGY, PARASITIC COMPONENTS AND BIAS CONDITIONS IN THE FREDEPENDENCE QUENCY RANGE UP TO 12 GHz + Chr. Tsironis and H. Beneking Abstract A procedure is described, which permits the theoretical determination of the influence of bias conditions, technological parameters and parasitic components on noise behaviour of microwave GaAs-MESFETs in the GHz

RECENT ADVANCES IN SOLID STATE MICROWAVE DEVICES G. Gibbons ABS 1RACT In this paper recent advances in three areas of microwave solid state devices will be discussed, namely GaAs FETs, InP TEDs and Si TRAPATTs. A common factor in advancing the performance capability and yields of these devices has been improvements in materials technology. GaAs FET noise figures below 1.5 dB are now achievable

LOW-LOSS WAVEGUIDEFILTER WITH IMPROVEDFAR-SELECTIVITY G.Reiter and V. Geleji ABSTRACT A rectangular waveguide. bandpass filter with improved harmonic suppression is described.The first resonator of the filter is made in an evanescent-mode guide section. This combined construction keeps the passband losses low and a significant improvement in the stopband performance can be achieved.Calculation

MULTI-PATH NETWORKS I SHAPING N D Kenyon A NOVELAPPROACHTO LINEAR-PHASE FILTERING AND ABSTRACT The paper presents a novel approach to the design of filtering and shaping networks having perfectly linear phase response and good input match at all frequencies, albeit with appreciable transmission loss. The method involves the provision of several transmission paths between the input and the out

A NEW CLASS OF DUAL-M0DE MICROWAVE FILTERS FOR SPACE APPLICATION S. Kallianteris +, C.~. Kudsia +, and M.N.S. Swamy t Abstract A new class of direct-coupled cavity bandpass filters having the same number of equi-ripple attenuation-zeros as the order of the filter and an attenuation-pole on either side of passband is described. Filters are configured in dual-mode structure operating in th