NEW METHOD FOR COMPUTING THE RESONANT FREQUENCIES OF DIELECTRIC RESONATORS Tatsuo Itoh * and Ronald Rudokas + ABSTRACT A new method is developed for accurately predicting resonant frequencies of dielectric resonators used in microwave circuits. By introducing an appropriate approximation in the field distribution outside the resonator, eigenvalue method. demonstrated The an analytical

INVESTIGATION OF TECHNOLOGIES, ELECTRICAL LUMPED ELEMENT CIRCUITS UP TO 15.,GHz FACHE Mi che 1 CHARACTERISTICS AND USE OF R L C ABSTRACT The advantage of the increased reproducibility, lumped elements are smaller size, less weight and a potential improved bandwidth, cost savings. With the traditional technologies, it was not possible to obtain low loss lumped circuits above 3 or 4 GHz. That is

DESIGN AND APPLICATIONS ATTENUATORS AND LOADS OF PRECISION MICROSTRIP MULTIOCTAVE H.J. Finlay +, L.G.T. Hopkins+ and J.M. Ozamiz+ ABSTRACT For precision applications MIC's have demonstrated improvements in performances by eliminating transitions which introduce interface errors. In this paper high performance MIC attenuators and loads are employed to evaluate or reduce such errors. A method i

THICK FILM MIC COMPONENTS IN THE RANGE 10 - 20 GHz D.C. R~c kard . + ABSTRACT The capability of potentially low cost thick film micros trip is extended in frequency range, augmenting previous work restricted to below 12 GHz. Line characteristics are presented and compared with thin film results. Thick film Q-factors approach 80% of thin film values and medium definition circuits are possib

HIGH CONVERSION DIODES B.M. KRAMER*, EFFICIENCY FREQUENCY MULTIPLIER USING GaAs AVALANCHE A.C. DERYCKE**, C.F. MASSE*, P.A. ROLLAND** ABSTRACT GaAs avalanche diodes for multiplication have been studied from 3 different points of view: theoretical, technological and circuit design, in order to obtain high efficiencies in the mm waveband. The GaAs diode design is explained and compared to

AN "0" BAND FAST PIN DIODE SWITCH A J Paffard * ABSTRACT An "0" band fast PIN diode SPST switch has been developed which has an insertion loss <= 1.0 dB and an isolation >= 25 dB over a 5% bandwidth. Switching speed is ns and estimated power handling is >= 1 watt c.w. The unit is to be used as a modulator in a 60 GHz, 130 megabit/see digital radio data link under development at RSRE Malvern.

lip A NEW TECHNOLOGY LAN FOR HIGH E M E S A S.II POWER STACKED VARACTORS A. CHAPARD* ABSTRACT: II Plane mesa" is the name for a new technology which yelds definite advantages when compared to traditional mesa structure, for straight forward stacking of chips, or for upside down mounting in order to reduce thermal resistances and (or) the series inductance. An example of practical a

LOW CONVERSION LOSSES UP AND DOWNCONVERTERS, USING DIELECTRIC RESONATORS FOR APPLICATION WITH MILLIMETRIC TELECOMMUNICATION SYSTEMS MAHIEU Jean Rene ABSTRACT This paper shows that it is now possible to design devices incorporating dielectric resonators for frequencies up to 40 GHz. Theoretical models have been studied in order to compute with the required accuracy the resonant frequency and coupl

A 14 GHz-LOW NOISE-DOWN-CONVERTER Dieter Dobramysl+) WITH SUM AND IMAGE REJECTION ABSTRACT The design and the experimental performance of a single-ended waveguide-mixer operating at a signal frequency of 14 GHz 14.5 GHz and an IF of 3.7 GHz to 4.2 GHz is reported. The conversion loss over the IF bandwidth of 500 MHz was < 3.5 dB. The optimum load impedance for the mixer diode at the sum frequenc

A LOW-NOISE + RECEIVER FOR 80 GHz + B. Vowinkel, + W. Reinert, K.-H. Gebler ABSTRACT A description of a mixer-receiver designed to operate at 80 GHz with an intermediate frequency of 2.7 GHz is given. An uncooled parametric amplifier is used for IF-amplification. The local oscillator injection is realized by a low-loss ring cavity directional filter. In single-sideband operation a cutoff fil