A POWER BIPOLAR TRANSISTOR OPTIMIZED FOR LINEAR PERFORMANCE UP TO 5 GHz
Wong R.W., Chen J.T.C., Snapp C.P., Solomon R., Stewart R.R.
A POWER BIPOLAR
TRANSISTOR
OPTIMIZED
FOR LINEAR
PERFORMANCE
UP TO 5 GHz
R. W. Wong, J. T. C. Chen, C. P. Snapp, R. Solomon, R. R. Stewart
ABSTRACT. A linear power transistor with 1.6 µm emitter width, 34 emitter sites, and individual emitter ballast resistors has been developed using a new transistor process which has excellent reproducibility. Such a transistor has been packaged with a sing