40 WATT 16 GHz PULSED GUNN DIODE OSCILLATOR
Stevens R., Tarrant D., Myers F.A.
40
WATT
16 GHz pumED
GUNN DIODE OSCILLATOR
Stevens,
R., Tarrant,
D., ~ers,
F.A.
ABSTRACT
Very high peak power levels at microwave frequencies can be generated from several semiconductor devices (Gunn diodes, L.S.A. mode devices, TRAPATT's etc.) but some of these devices are only little removed from laboratory devices, and are limited in frequency. The Gunn device is the most practical and