POWER TRANSFER IN THE FRESNEL ZONE AT MM-WAVELENGTHS G.SCHAERER ABSTRACT The power transfer efficiency(ratio of received to trans - mitted power) between two elliptical antennas in the Fresnel zone is investigated experimentally. The design procedure for an optimum power transfer system is analyzed. Pyramidal horns in the foci of the ellipsoids enable an optimum phase illumination. Deviations

IMPORTANCE OF AMPLITUDE SCINTILLATIONS IN MILLIMETRIC RADIO LINKS E. Vilar and P.A. Matthews ' '""" . . \ Amplitude scintillations in millimetric/radio propagation are not usually considered by systems engineers I In this paper, the experimental measurements of these scintillations in a 36 GHz radio link have been fitted into a model suitable for the millimetric range. From it, the amplit

* ATMOSPHERIC EFFECTS ON TERRESTRIAL MILLIMETER-WAVE COMMUNICATIONS S. J. Dudzinsky, Jr. f millimeter-wave communications links that operate on paths through the atmosphere requires an understanding of atmospheric transmission losses, especially losses due to rainfall attenuation. This paper combines information on transmission properties of millimeter waves with meteorological data to derive a

THE DESIGN OF BARITT OSCILLATORS BASED ON LARGE-SIGNAL MEASUREMENTS. R. D. Pollard, ABSTRACT M. J. Howes and D. V. Morgan. The design of microwaveoscillators using solid-state, negativeresistance devices is considered from the point of view of the general criterion for a steady-state free-running oscillator circuit. The intersection of the circuit admittance locus with the large-signal "devi

HARITT IMPEDANCE FROM DC MEASUREMEN'l'S ON WAFERS A. Chiabrera~, G. Soncini+, M. Tomassinix ABSTRACT The small-signal impedance of diffused junction BARITTs is obtained by an analytical expression, which depends on the dc differential resistance measured at each bias current directly on the silicon wafer. The impedances computed according to the above procedure are in agreement with published

ABOVE X-BAND PERFORMANCE OF BARI'IT DIODES ArmstrQng, B.M., Christie, Wakefield, J. J., Gamble,.H.S., Stewart, J.A.C. and Abstract The predicted small signal noise measure and impedance of . pnp Baritt diodes is described for three values of n region doping density, Nd, at frequencies up to 20GHz. It is shown that for suitable values of Nd, small signal noise measures of order l0dB or less ca

Punch Through Injection Structures for low voltage oscillation and low noise D. amplification DELAGEBEAUDEUF ABSTRACT: Two punch through injection structures are proposed, the first one for low voltage oscillation, the second one for low noise amplification to achieve the first objective N+ P N+ structures have been realized which gave interesting results.. The second objective p+ has b

A NEW CONCEPT FOR MICROSTRIP-INTEGRATED GaAs SCHOTTKY-DIODES A. WORTMANN ABSTRACT: A new concept for integrated planar Schottky-diodes has been developed. It meets the two important requirements in the design of microwave diodes: high cutoff frequency and low parasitics. Only one epitaxial layer is needed. The Schottky contact is deposited on the slope of a mesa in order to obtain both low ser

DESIGN, PERFORMANCE, AND BEHAVIOR OF PULSED AND CW SILICON DOUBLE-DRIFT IMPATTS CRAIG P. SNAPP, GEORGE PFUND, AND ALLEN F. PODELL ABSTRACT Double-drift silicon IMPATTs for high power pulsed and CWapplications have been optimized by the proper design of the width and impurity concentration in both the Nand P-layers. Peak pulse powers greater than 18 watts at a 25% duty cycle were obtained at 10