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ASPECTS ON NOISE IN BARITT DIODES
A. Sjölund, F. Sellberg
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1973
METAL-N-P+ AND P+ - N - P+ BARRITT NOISE SIMULATION
J. Christie, B.M. Armstrong, J.A.C. Stewart
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1973
THEORETICAL ANALYSIS AND COMPUTER SIMULATION OF DOUBLE SIDED n+ -n-p-p+ TRAPATT DIODE STRUCTURES
M.G. Cottam, S.R. Geraghty
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1973
PIN DIODE LIMITER DYNAMICS
R. Garver, F. Reggia, R. Callow
A.9.5. PIN DIODE LIMITER DYNAMICS R. Garver, F. Reggia, & R. Callow Harry Diamond Washington, Laboratories D.C. 2n438 ABSTRACT Theory to limit and experiments level, spike are leakage, presented relating PIN diode junction properties and recovery. SUMMARY Presently the PIN diode. available PIN diode are is limiters made for do not power realize above of the full capability 10 GHz mode. and
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1973
20°K - COOLABLE PIN DIODE SWITCH WITH VERY LOW LOSS IN L-BAND
J. Edrich, R. Turner
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1973
NOVEL FORMS OF MICROWAVE LIMITER
C.D. Hannaford, J.R. Duncan
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1973
CHIP DIODE PHASE SHIFTERS FOR 5.1 AND 15.5 GHz
J.F. White
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1973
CHARACTERIZATION OF REFLECTION PHASE MODULATORS USING HYPERBOLIC GEOMETRY
T.A. Dorschner
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1973
A HIGH POWER GAAS SCHOTTKY BARRIER IMPATT DIODE IN 30GHZ BAND
M. Migitaka, M. Nakamura, K. Saito, K. Sekine
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1973
INFLUENCE OF TRANSVERSE INSTABILITY ON THE EFFICIENCY OF IMPATT DIODES
B.B. van Iperen
INFLUENCE OF TRANSVERSE EFFICIENCY INSTABILITY DIODES ON THE OF IMPATT B.B. van Iperen Philips Research Laboratories Eindhoven-The Netherlands ----------- Abstract. Measuring results of large-signal impedance, ac voltage and Io-Vo characteristics (Vo and Io dc voltage and current resp) on X-band Si Impatt diodes in pulse operation show that the efficiency is limited by saturation of the a
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1973
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