EUMA

24787 documents

CHARACTERISTIC PARAMETERS OF TRAPATT DIODES

I.W. Mackintosh, R.J. Royds

1973

SILICON IMPATT DIODES FOR OPERATION AT GREATER THAN 50 GHz

F.J. Hilsden, C.M. Butler

1973

SILICON AVALANCHE DIODE WITH AN EPITAXIAL DOUBLE DRIFT STRUCTURE FOR MILLIMETRIC APPLICATIONS

J.V. Bouvet

1973

RECENT ADVANCES IN THE BURNOUT PROPERTIES OF LOW NOISE GALLIUM ARSENIDE SCHOTTKY BARRIER MIXER DIODES

G.H. Swallow, T.H. Oxley, A.M. Hansom

1973

MEASUREMENT OF THE NOISE FIGURE AND ADMITTANCE OF InP TRANSFERRED ELECTRON AMPLIFYING DEVICES

P.W. Braddock, K.W. Gray, R.D. Hodges

1973

NOISE STUDIES ON GUNN DIODES

A. Mircea, J. Magarshack, P. Lesartre, M. Mautref

1973

THE CONTROL OF THE CATHODE CONTACT BARRIER FOR HIGH EFFICIENCY InP OSCILLATORS

L.D. Irving, J.E. Pattison, D.J. Colliver

1973

TIME AVERAGED AND DYNAMIC VOLTAGE DISTRIBUTIONS IN GUNN DEVICES

A. Gopinath, M.S. Hill, P.J. Fentem

1973

GUNN-DIODE SPACE CHARGE MODE ESTABLISHED BY MAGNETORESISTANCE AND NEGATIVE CONDUCTANCE

H. Hartnagel, K.N. Tripathi, T.J. Hutchinson

1973

"LOCALLY TUNED" REFLECTION TYPE IMPATT DIODE AMPLIFIER

G. Salmer, I. Doumbia, B. Carnez, A. Mircea

1973

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