Investigation of hFE Degradation in Microwave Transistors due to E-B Breakdown Under Multicarrier Conditions
M.M.M.H. Gibson, T.P. McElhone, M. Pollacsek, S. Stryk
Investigation Breakdown MM. M.H.
of hFE Degradation Multicarrier
in Microwave
Transistors
due
to E-B
Under Gibson,
Conditions M. Pollacsek, S. Stryk ~
T.P. McElhone,
ABSTRACT The use of R.F. transistor power amplifiers under multicarrier operating conditions in satellite transponders can create reliability problems incompatible with a long mission life, due to the high instantaneous volta