MICROWAVE PROPAGATION IN A WAVEGUIDE CONTAINING COMPOSITE STRUCTURE OF SEMICONDUCTOR AND FERRITE P.N. Gupta and S.K. Tolpadi ABSTRACT In this communication propagation characteristics of a waveguide filled with a composite system of semiconductor and ferrite slab have been investigated. The dispersion relation for the propagation of electromagnetic waves along the interface between a low-lo

CHARACTERISTICS OF MICROSTRIP ON ANISOTROPIC SUBSTRATES + and N.K.Uzunoglu N.G.Alexop~ulos ABSTRACT The effect of anisotropic substrates on the properties of microstrip is considered for single and coupled lines. The Green's function is obtained for the quasistatic case and it is applied to the solution of infinitesimally thin as well as thick microstrip conductors. A new numerical method is in

FAST ACCURATE HYBRID MODE COMPUTATION OF NONSYMMETRICAL LED MICROSTRIP CHARACTERISTICS R.H. Jansen COUP- ABSTRACT - A numerically efficient rigorous spectral domain solution of the wave equation is presented for covered and open nonsymmetrical coupled microstrip lines. Dispersion characteristics of the two fundamental quasi-TEM modes existing on this structure are given and found to agree excell

RF-IMPEDANCE DETERMINATION OF MM-WAVE WAVEGUIDE MIXER MOUNTS C.Hagstr6m, E.Kollberg, S.Lidholm ABSTRACT When making low noise millimeter wave mixers, knowledge of the RF-circuit is of great importance. The measurement of circuit properties is difficult due to lack of the sophisticated instruments available at lower frequencies. In this paper a method of determining the RF-impedance using

ON THE MEASUREMENT RESONANCE TECHNIQUE. (1) Paolo BERNARDI. OF MICROSTRIP DISCONTINUITY SCATTERING MATRICES BY A (2) Franco BERTOLANI and Vittorio RIZZOLI (3) Abstract. A neW simple solution to the problem of experimentally characterizing the behaviour of symmetrical microstrip discontinuities is presented To perform the measurement, a resonant cavity consisting of a couple of iden tical m

IMPROVING MICROWAVE REFLECTION MEASUREMENTS Duane E. Dunwoodie ABSTRACT * An improved measurement method for production and laboratory reflection (SWR) measurements is presented. Two methods for improving accuracy of swept data by factors of ten times are explained and typical results presented. These methods extend the range of reflection measurements to beyond 1. 006 SWR (50 dB Return Loss

NOVEL LARGE SIGNAL AMPLIFIER S-PARAMETER DESIGN MEASUREMENT TECHNIQUE AIDS GaAs POWER Robert A. SOARES ABSTRACT This paper describes a method for obtaining the microstrip circuit source and load impedances which permit a certain transistor gain/power load performance to be realised. A conventional power test bench, a small signal network analyser and a simple computer program are used, an

DESIGN OF LINEAR GAAS FET AMPLIFIERS By W.M. Kelly, J.G. de Koning, J.W. Monroe, H. Tokuda; Division, Hewlett-Packard Company, Palo Alto, Microwave Semiconductor 94304 California Abstract A newly developed technique is described for maximizing one dB com~ pression output power of a microwave amplifier across practical bandwidths. gain compression characteristics at X-band of a packaged GaAs FE

AN EXPERll1ENTAL EVALUATION OF X-BAND MIXERS USING DUAL-GATE GaAs MESFETS S. C. Cripps, O. Nielsen, D. Parker and J. A. Turner ABSTRACT Experimental results are presented for X-band GaAs MESFET mixers using a dual-gate device. This device combines high conversion gain and low noise operation with the convenient feature that the RF and local oscillator signals can be applied to the separate

DESIGN FET AND PERFORMANCE OF LOW NOISE C - AND X - BAND GaAs MIXERS B. LORIOU * and J.C. LEOST- ABSTRACT Different configurations of MESFET mixers are compared in the 6 GHz band for intermediate frequencies ranging from 30 MHz to 1.5 GHz. Conversion gain of 10 dB associated with 4 dB SSB noise figure have been achieved. Results will be presented concerning a balanced module made up of two