SURFACE. WAVES IN MICROSTRIP CIRCUITS R.J. COLLIER and P.D. WHITE* ABSTRACT The launching of surface waves by discontinuities in microstrip circuits can cause extra coupling between adjacent devices. This paper gives measurements of the efficiency of an open circuit in microstrip to both launch and receive surface waves. The measurement technique is described in which the radiated waves from

THEORETICAL NON-UNIFORM MICROSTRIP AND EXPERIMENTAL IN THE ANALYSIS FREQUENCY OF RANGE LINES 2-18 GHz Guglielmo D'lnzeo, Franco Giannini and Roberto Sorrentino ABSTRACT In the field of microwave integrated devices, non-uniform microstrip lines have recently received considerable attention. Among these, with regard to band-width and losses, non-uniform microstrips with a continuously varyi



New Transistor Operating for High Frequency and High Power Jun-ichi Nishizawa * and Yoji Kato ** The main mechanism of operation of a new transistor which shows exponential I-V character, is based on the static induction and is called SIT (Static Induction Transistor). SIT is a promissing device also for higher frequency operation because of (1) short channel length, (2) lower gate ser

GaAs POWER MESFET AMPLIFIER DESIGN John A. Angus, David A. Abbott and Edward Kelly ABSTRAC T GaAs power MESFETs capable of producing in excess of 600 mWwith 6 dB gain and 33% power added efficiency at 8 GHz have been produced. The use of these devices in amplifiers for S, C and X-bands will be described. Techniques for effective heat sinking whilst maintaining low parasitics will be discuss

IMPROVEMENTS IN LOW NOISE GALLIUM ARSENIDE FETS FOR X-BAND APPLICATIONS Richard S. Butlin, Donald Parker, Anthony J. Waller and James A. Turner* ABSTRACT A single stage narrow band amplifier operating at 8 GHz has been developed with a noise figure of 2.2 dB and associated gain of 7.0 dB. Correcting for microstrip losses yields a device noise figure of 1.9 dB and associated gain of 7.6 dB

A LOW NOISE FET AMPLIFIER FOR APPLICATIONS AT 12 GHz +) R. J. Teperek ABSTRACT This paper describes the performance of a commercially available 1/2 um gate FET chip in a "home madell package as a low noise amplifier at 12 GHz. The package can be easily inserted into and removed from an alumina microstrip circuit. A single stage circuit is described, which in conjunction with the FET and package

COMPUTER-~IDED DESIGN OF MICROSTRIP GaAs MESFET AMPLIFIERS O . Nl.elsen . . ABSTRACT Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage amplifiers

POWER Ga-As F.E.T. CHARACTERIZATION P. DUFOND and H. DEREWONKO* ABSTRACT: Microwave Ga-As F.E.T. characterization, starting from internal geometry is presented and extended to power F.E.T. A computer program, solving the transport equations for charge carriers in the channel versus biasing conditions and geometrical parameters, gives static characteristics and the equivalent circuit. Calculati

FILTERS AND MULTIPLEXERS FOR SATELLITE COMMUNICATIONS J D Rhodes* ABSTRACT During the last eight years significant advances have been made in the design and construction of microwave selective linear phase filters prompted by the need for maximum bandwidth utilisation in satellite communications. Very recently design procedures have been developed for selective linear phase channel multiplexer