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RAY METHODS FOR EVANESCENT FIELDS
Felsen L.B.
RAY METHODS FOR EVANESCENT FIELDS+ Leopold B. Felsen* ABSTRACT This paper deals of high frequency with a review of recent evanescent fields. developments in the treatment Evanescent fields have conventionally been associated with guided modes. For dielectric waveguides, for example, the evanescent fields in a trapped (discrete) mode exist exterior to the guiding structure, and they are speci
A COMPOSITE X BAND HIGH POWER-FERRITE LIMITER
Foo V.-Y., Aitchison C.S.
A COMPOSITE X BAND HIGH POWER-FERRITE LIMITER V-Y Foo and C S Aitchison * ABSTRACT This paper outlines a qualitative model which describes the action of ferrite limiters. Using this model a simple composite sandwich and slab limiter has been designed and constructed and has given a threshold of 15 watts, a maxim power handling of 50 kW, corresponding to a dynamic range of 35 dB at 8.96 GHz. T
EXISTENCE REGIONS FOR EGW IN MIC STRUCTURES
de Santis P.
EXISTnfCE RmI01lS FOR EGW m MIC S'mUCTURES P. de Santis ABSTRACT EGW existence EGW resonator. regions are identified on the mode chart of a disk MIC
THEORETICAL AND EXPERIMENTAL STUDY OF LOSS PARAMETERS AND HIGH ORDER IN OSEL DEVICES
FORTERRE G., MARCOUX J., COURTOIS L.
THEORETICAL AND EXPERIMENTAL STUDY OF LOSS PARAMETERS AND HIGH ORDER IN OSEL DEVICES G. FORTERRE - J. MARCOUX L. COURTOIS ABSTRACT Non reciprocal devices using the dynamic surface mode can operate on a broad frequency band. However, beyond a given frequency, some higher order modes can propagate and this fact limits the operational bandwidth. A theoretical and experimental investigation of the
THE PERIPHERAL OR EDGE-GUIDED MODES ON THE INHOMOGENEOUSLY AND HOMOGENEOUSLY FERRITE LOADED STRIPLINE
Bolle D.M.
THE PERIPHERAL OR EDGE-GUIDEDMODESON THE INHOMOGENEOUSLY AND HOMOGENEOUSLY FERRITE LOADEDSTRIPLINE Donald M. Bolle* ABSTRACT: The results of a rigorously formulated solution of the edgeguided mode on inhomogeneouslyand homogeneously ferrite loaded stripline are presented. The assumption that the width of the stripline is sufficiently large so that interaction between the edges may be neglected, h
PROPAGATION IN THE FERRITE MICROSTRIP MAGNETIZED PERPENDICULARLY TO THE GROUND PLANE
Mazur J.
PROPAGATION IN THE FERRITE MICROS TRIP MAGNETIZED TO THE GROUND PLANE PERPENDICULARLY J. Mazur ~ ABSTRACT. The Fourier method of the dielectric micros trip line analysis proposed by Denlinger [i] is extended for the ferrite microstrip line case. After introduction of the fringing and edge mode effects, the logitudinal and transverse current distributions on the strip were used for solvin
4 GHz LOW NOISE PARAMETRIC AMPLIFIER
Franti L.F.
4 GHz LOW NOISE PARAMETRIC ~ AMPLIFIER L. F. Franti ABSTRACT A rugged and reliable 4 GHz uncooled parametric amplifier is presented. The solution is particularly suited to domestic systems and for installations where cost of maintenance is a problem. It complies with the specifications for ground stations operating with Intelsat Satellites. Some features are: 1) a low pump frequency of 44 GHz f
PRESENT AND FUTURE CAPABILITY OF MILLIMETER WAVE PUMPED PARAMPS
Whelehan J.J.
PRESENT AND FUTURE PARAMPS CAPABILITY OF MILLIMETER WAVE PUMPED James J. Whelehan Abstract Parametric amplifiers have been extensively used in many applications (communications, radar, ECM, etc.), through Ku-band (~20 GHz), in which packaged varactors with relatively high cutoff frequencies and moderate self-resonant frequencies have been used. The extension of par amps into the higher freque
A POWER BIPOLAR TRANSISTOR OPTIMIZED FOR LINEAR PERFORMANCE UP TO 5 GHz
Wong R.W., Chen J.T.C., Snapp C.P., Solomon R., Stewart R.R.
A POWER BIPOLAR TRANSISTOR OPTIMIZED FOR LINEAR PERFORMANCE UP TO 5 GHz R. W. Wong, J. T. C. Chen, C. P. Snapp, R. Solomon, R. R. Stewart ABSTRACT. A linear power transistor with 1.6 µm emitter width, 34 emitter sites, and individual emitter ballast resistors has been developed using a new transistor process which has excellent reproducibility. Such a transistor has been packaged with a sing
THE APPLICATION OF NEGATIVE FEEDBACK TO MICROWAVE BIPOLAR TRANSISTOR AMPLIFIERS
WALKER J.L.B., HUGBES E., WILSON K.
THE APPLICATION OF NEGATIVE FEEDBACK TO MICROWAVEBIPOLAR TRANSISTOR AMPLIFIERS J.L.B. Walker, E. Hughes and K. Wilson ABSTRACT It is shown that RLC feedback between the base and collector of a microwave bipolar transistor enables one to design a single-stage unbalanced amplifier with a two-octave bandwidth (0.5 - 2.0 GHz). Over this bandwidth the measured terminal v.s.w.r.'s are within 2:1,
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