Proceedings of the 15th European Microwave Integrated Circuits Conference Real-time, In-circuit Temperature Sensing of an X-Band GaN Power Amplifier Simon J. Mahon#, Olivia Ell#, Leigh E. Milner#*, Evgeny Kuxa#, Anthony E. Parker#, Melissa C. Gorman#, Michael C. Heimlich# # * Macquarie University, NSW 2109, Australia Defence Science and Technology, Third Avenue, Edinburgh, SA 5111, Australia si

Proceedings of the 15th European Microwave Integrated Circuits Conference A Full D-Band Low Noise Amplifier in 130 nm SiGe BiCMOS using Zero-Ohm Transmission Lines Tim Maiwald# , Julian Potschka# , Katharina Kolb# , Marco Dietz# , Klaus Aufinger§ , Akshay Visweswaran* and Robert Weigel# # Friedrich-Alexander University of Erlangen-Nuremberg Institute for Electronics Engineering, Cauerstr. 9, 910

Proceedings of the 15th European Microwave Integrated Circuits Conference Intermodulation Distortion Analysis of Microwave Tunable Filters Using Barium Strontium Titanate Capacitor and Varactor Diode Patrícia Bouça#1 , Ricardo Figueiredo#2 , João Nuno Matos#3 , Paula M. Vilarinho*4 , Nuno Borges Carvalho#5 # Universidade * Centre de Aveiro, DETI and Instituto de Telecomunicações, Portugal for R

Proceedings of the 15th European Microwave Integrated Circuits Conference A GaN/SiC UHF PA for Particle Accelerators with 100-145V Quasi-Static Drain Modulation Gabriele Formicone, James Custer Integra Technologies Inc., USA {gformicone, jcuster}-integratech.com Abstract ? This publication introduces a solid-state technology based on RF GaN/SiC High Electron Mobility Transistors (HEMT) operating

Proceedings of the 15th European Microwave Integrated Circuits Conference 167-GHz and 155-GHz High Gain D-band Power Amplifiers in CMOS SOI 45-nm Technology Abdelaziz Hamani, Alexandre Siligaris, Benjamin Blampey, Jose Luis Gonzalez Jimenez Université Grenoble-Alpes, CEA-Leti, Minatec Campus, Grenoble, France {abdelaziz.hamani, alexandre.siligaris, benjamin.blampey, joseluis.gonzalezjimenez}-cea.

Proceedings of the 15th European Microwave Integrated Circuits Conference Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation Stefan Andri?, Lars Ohlsson-Fhager, Lars-Erik Wernersson Department of Electrical and Information technology, Lund University, Sweden stefan.andric-eit.lth.se Abstract ? Vertical nanowire MOSFETs exhibit asymmetric gate capacitances, al

Proceedings of the 15th European Microwave Integrated Circuits Conference Global Assessment of PA variability through concurrent Physics-based X-parameter and Electro-Magnetic simulations S. Donati Guerrieri, C. Ramella, F. Bonani, G. Ghione Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Italy efficient statistical simulations. Active devices are modelled at circuit level

Proceedings of the 15th European Microwave Integrated Circuits Conference Multi-Gigabit RF-DAC Based Duobinary/PAM-3 Modulator in 130 nm SiGe HBT Frida Str¨ombeck#* , Zhongxia Simon He# , Herbert Zirath# # Microwave Electronics Laboratory, Chalmers University of Technology, Sweden * stfrida-chalmers.se been demonstrated, for example a 140 GHz (CP-FSK) link transferring 12 Gbps over one meter pla

Proceedings of the 15th European Microwave Integrated Circuits Conference A 28-GHz High Linearity and High Efficiency Class-F Power Amplifier in 90-nm CMOS Process for 5G Communications Bo-Ze Lu#1, Yunshan Wang, Zhi-Jia Huang, Kun-You Lin and Huei Wang#2 Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan 1 simon199508-gmail.com, 2hueiwang-ntu.edu.tw M1 =

Proceedings of the 15th European Microwave Integrated Circuits Conference Orthogonalization of Multi-Port Scattering Matrices with the Generalized S-Parameter Transformation to Reduce Surrogate Model Complexity Petrie Meyer Stellenbosch University, South Africa pmeyer-sun.ac.za Abstract ? This paper describes the use of the Generalized S-Parameter Transformation Technique to reduce the number of