EuMIC: Drain Current Recovery Time Analyses of InAlGaN/GaN HEMTs Realized with a Back-Barrier Buffer Layer
S. Piotrowicz, C. Potier, J.-C. Jacquet, Jean-Christophe Nallatamby, M. Prigent, P. Altuntas, E. Chartier, C. Dua, P. Gamarra, C. Lacam, N. Michel, M. Oualli, O. Patard, S.L. Delage
Proceedings of the 14th European Microwave Integrated Circuits Conference
Drain Current Recovery Time Analyses
of InAlGaN/GaN HEMTs Realized
with a Back-Barrier Buffer Layer
S.Piotrowicz1, C.Potier1, J.C.Jacquet1, J.C. Nallatamby2, M.Prigent2, P.Altuntas1, E.Chartier1,
C.Dua1, P.Gamarra1, C.Lacam1, N.Michel1, M.Oualli1, O.Patard1, S.L.Delage1
1
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaise