Proceedings of the 14th European Microwave Integrated Circuits Conference A 28-60 GHz SiGe HBT LNA with 2.4-3.4 dB Noise Figure Jubaid Abdul Qayyum#1, John Albrecht#2, John Papapolymerou#3, Ahmet Cagri Ulusoy*#4 # Department of Electrical and Computer Engineering, Michigan State University, USA * Karlsruhe Institute of Technology, Germany 1 { qayyumju, 2jalbrech, 3jpapapol}-egr.msu.edu, 4ulusoy-

Proceedings of the 14th European Microwave Integrated Circuits Conference Characterization of Different Technologies of GaN HEMTs of 0,15 µm Ultra-Short Gate Length: Identification of Traps Using TCAD Based 2D Physics-based Simulation Mohamed Bouslama#, Raphael Sommet# and Jean-Christophe Nallatamby# # Univ.limoges, CNRS, Xlim, UMR 7252, F-19100, Brive mohamed.bouslama-unilim.fr Abstract ? In t

Proceedings of the 14th European Microwave Integrated Circuits Conference Physically-based statistical analysis of nonlinear circuits through X-parameters S. Donati Guerrieri1 , F. Bonani1 , G. Ghione1 1 Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino Corso Duca degli Abruzzi, 24, I-10129 Torino, Italy LS compact models. The PB X-par model can also be made parametrically

Proceedings of the 14th European Microwave Integrated Circuits Conference Gigahertz Frequency Graphene Transistor, high yield process and good stability under strain W. Wei1, S. Mhedhbi1, S. B. Salk1, T. Levert1, O. Txoperena2, E. Pallecchi1, H. Happy1 1 Institute of Electronics, Microelectronics and Nanotechnology, (IEMN) CNRS UMR8520, Villeneuve d?Ascq, cedex, France. 2 Graphenea, Avenida de T

Proceedings of the 14th European Microwave Integrated Circuits Conference Narrow-pulse-width double-pulsed S-parameters measurements of 100-nm GaN-on-Si HEMTs Alberto Maria Angelotti#1 , Gian Piero Gibiino#2 , Corrado Florian#3 , Alberto Santarelli#4 # Dept. Electrical, Electronic, and Information Engineering ?G. Marconi?, University of Bologna, Italy {1 alberto.angelotti, 2 gianpiero.gibiino, 3

Proceedings of the 14th European LOout Microwave feed-through Integrated Circuits x3 120-GHz 120-GHz PA Conference amplifier IQ modulator A D-band Fully-Integrated 2-RX, 1-TX FMCW Radar Sensor with 13 dBm Output Power 20-GHz amplifier RX 100 ? Impedance matching 20-GHz balun power divider IQ receiver LOin =20 GHz 1 Muhammad Furqan, Faisal Ahmed, and Andreas Stelzer 90? coupler IQ IF

Proceedings of the 14th European Microwave Integrated Circuits Conference A 300 GHz Active Frequency Tripler in Transferred-Substrate InP DHBT Technology T. K. Johansen#1 , M. Hossain* , S. Boppel* , R. Doerner* , V. Krozer* , W. Heinrich* # DTU Elektro, Technical University of Denmark, Denmark * Ferdinand-Braun-Institut, Leibniz-Institut f¨ur H¨ochstfrequenztechnik (FBH), Berlin, Germany 1 tkj-

Proceedings of the 14th European Microwave Integrated Circuits Conference A High-Speed Millimeter-Wave QPSK Transmitter in 28nm CMOS FD-SOI for Polymer Microwave Fibers Applications Florian Voineau1, Baudouin Martineau2, Mathilde Sié1, Anthony Ghiotto3, Eric Kerhervé3 1 STMicroelectronics, Crolles, 38920 France University Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France 3 University of Bordea

Proceedings of the 14th European Microwave Integrated Circuits Conference Low Phase Noise Digital Division by 2 and by 3 of a 30 GHz Coupled Optoelectronic Oscillator ´ Arnaud Collet#1 , Olivier Llopis#2 , Gilles Cibiel*3 , Eric Tournier#4 # LAAS-CNRS, Universit´e de Toulouse, CNRS, UPS, Toulouse, France 18 Avenue Edouard Belin, Toulouse, France 1 2 { arnaud.collet, olivier.llopis, 4 eric.tourni

Proceedings of the 14th European Microwave Integrated Circuits Conference A Broadband Antenna-Coupled Terahertz Direct Detector in a 0.13-µm SiGe HBT Technology Marcel Andree#1 , Janusz Grzyb# , Ritesh Jain# , Bernd Heinemann*2 , Ullrich R. Pfeiffer# # IHCT, University of Wuppertal, Germany - Leibniz-Institut f¨ur innovative Mikroelektronik, Germany 1 andree-uni-wuppertal.de, 2 heinemann-ihp-mic