A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
Peng Luo, Frank Schnieder, Olof Bengtsson, Valeria Vadalà, Antonio Raffo, Wolfgang Heinrich, Matthias Rudolph
Accurately and efficiently modeling the drain-lag effects is crucial in nonlinear large-signal modeling for Gallium Nitride high electron mobility transistors. In this paper, a simplified yet accurate drain-lag model based on an industry standard large-signal model, i.e., the Chalmers (Angelov) model, extracted by means of pulsed S-parameter measurements, is presented. Instead of a complex nonline