Proceedings of the 12th European Microwave Integrated Circuits Conference Liquid Crystal Based Phase Shifter in a Parallel-Plate Dielectric Waveguide Topology at V-Band R. Reese, E. Polat, M. Jost, M. Nickel, R. Jakoby and H. Maune TU Darmstadt, Institute for Microwave Engineering and Photonics, Darmstadt, Germany reese-imp.tu-darmstadt.de Abstract--This work presents a simple approach for a cont

Proceedings of the 12th European Microwave Integrated Circuits Conference Reactively Matched 3-Stage C-X-Ku Band GaN MMIC Power Amplifier G. Christopher Barisich#*1, Edward Gebara*, Huifang Gu*, Craig Storey, Pouya Aflaki, John Papapolymerou # School of Electrical and Computer Engineering, Georgia Institute of Technology Atlanta, Georgia, USA 1 c.barisich-gatech.edu Nanowave Technologies, Inco

Proceedings of the 12th European Microwave Integrated Circuits Conference Low-Loss mm-Wave Transition from On-Chip Microstrip to Rectangular Waveguide Daniel López Cuenca, Jan Hesselbarth Institut für Hochfrequenztechnik University of Stuttgart 70569 Stuttgart, Germany Golzar Alavi Institut für Nano- und Mikroelektronische Systeme University of Stuttgart 70569 Stuttgart, Germany Abstract -- A n

Proceedings of the 12th European Microwave Integrated Circuits Conference A Reconfigurable In-band Digital Predistortion Technique for mmWave Power Amplifiers Excited by a Signal with 640 MHz Modulation Bandwidth Chao Yu, Debin Hou, Honglei Sun, Fan Meng, Xiao-Wei Zhu, Jianfeng Zhai, Jixin Chen, Pinpin Yan State Key Laboratory of Millimeter Waves, Southeast University Nanjing, China chao.yu-seu.e

Proceedings of the 12th European Microwave Integrated Circuits Conference Analysis of a thin film dielectric characterization method based on the impedance difference of two MIM capacitors A. Niembro-Martin, D. Mercier, H. Sibuet, C. Dieppedale, C. Baret, C. Bonnard, C. Billard Univ. Grenoble Alpes, 38000, France, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054, Grenoble, France Abstract--Th

Proceedings of the 12th European Microwave Integrated Circuits Conference GaN-on-Silicon Present Challenges and Future Opportunities Timothy Boles MACOM Technology Solutions, 100 Chelmsford St., Lowell Massachusetts 01851, USA timothy.boles-macom.com Abstract-- Gallium Nitride, in the form of epitaxial HEMT transistors on silicon carbide substrates is now almost universally acknowledged as the re

Proceedings of the 12th European Microwave Integrated Circuits Conference 40­45 GHz High-IF Stage for Extremely Wide Tuning Range Receivers in 0.13 m SiGe BiCMOS Hebat-Allah Yehia Abdeen , Shuai Yuan , Hermann Schumacher , Volker Ziegler and Askold Meusling of Electron Devices and Circuits Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany Email: hebat-allah.abdeen-uni-ulm.de Airbus Gr

Proceedings of the 12th European Microwave Integrated Circuits Conference Concurrent Dual-Band Digital Predistortion Based on Canonical Piecewise Linear Functions Zhijian Yu1 and Wei Wang Shanghai Huawei Technologies Co., Ltd., Shanghai, China, 201206 1 yuzhijian-huawei.com Abstract-- In the paper, experimental results of a novel dualband DPD model based on CPWL functions [4] are provided. With

Proceedings of the 12th European Microwave Integrated Circuits Conference 0.16 mW, 7-70 GHz Distributed Power Detector with 75 dB Voltage Sensitivity in 130 nm Standard CMOS Technology Saad Qayyum and Renato Negra Chair of High Frequency Electronics RWTH Aachen University 52068 Aachen, Germany Email: saad.qayyum-hfe.rwth-aachen.de Abstract--This paper presents the design and implementation of a

Proceedings of the 12th European Microwave Integrated Circuits Conference Charge Conservative FET Modelling Using ANNs Justin King and Ciar´ n Wilson a School of Electrical and Electronic Engineering University College Dublin Dublin 4, Ireland. Email: justin.king-ucd.ie Abstract--The paper presents a comprehensive charge modelling approach for field-effect transistor (FET) devices. For the first