Proceedings of the 12th European Microwave Integrated Circuits Conference Sub-THz Micromachined Waveguides for Wafer Level Integration of MMICs Pekka Pursula, Antti Lamminen, Mikko Kantanen, Jaakko Saarilahti, Vladimir Ermolov VTT Technical Research Centre of Finland Espoo, Finland {firstname.surname}-vtt.fi Abstract--We demonstrate first results towards sub-THz integration system based on microm

Proceedings of the 12th European Microwave Integrated Circuits Conference Integrated Scalable and Tunable RF CMOS SOI Quadrature Hybrid Coupler Vincent Knopik1, Boris Moret1,2, Eric Kerherve2 2 STMicroelectronics, Technology and Design Platform, Crolles France University of Bordeaux, IMS laboratory, CNRS UMR 5218, Bordeaux INP Talence, France 1 Abstract--Hybrid is a key component in RF and Mic

Proceedings of the 12th European Microwave Integrated Circuits Conference Global Modeling of GaN HEMT Resistive Current including Charge Trapping and Self-Heating for Multi-Bias Multi-Class PA Performance Prediction Gian Piero Gibiino, Rafael Cignani, Alberto Santarelli, and Fabio Filicori DEI "G. Marconi", University of Bologna Viale Risorgimento 2, 40136 Bologna, Italy email: gianpiero.gibiino-

Proceedings of the 12th European Microwave Integrated Circuits Conference HEMT Large-Signal Integral Transform Model Including Trapping and Impact Ionization Friedbert van Raay, Matthias Ohlrogge, Arnulf Leuther, Dirk Schwantuschke, and Michael Schlechtweg Fraunhofer Inst. for Applied Solid-State Physics (IAF) Tullastr. 72, D-79108 Freiburg, Germany friedbert.van.raay-iaf.fraunhofer.de Abstract--

Proceedings of the 12th European Microwave Integrated Circuits Conference A Direct Carrier I/Q Modulator for High-Speed Communication at D-Band Using 130nm SiGe BiCMOS Technology Sona Carpenter, Zhongxia Simon He and Herbert Zirath Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96 Göteborg, Sweden sona-chalmers.se, zhongxia-

Proceedings of the 12th European Microwave Integrated Circuits Conference Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding Thomas Gerrer , Volker Cimalla , Patrick Waltereit, Stefan M¨ ller, Fouad Benkelifa, u Thomas Maier, Heiko Czap, Christoph Nebel and R¨ diger Quay u Fraunhofer Institute for Applied Solid State Physics Tullastr. 72, 79108 Freiburg, Germany t

Proceedings of the 12th European Microwave Integrated Circuits Conference A 109-137 GHz Power Amplifier in SiGe BiCMOS with 16.5 dBm Output Power and 12.8% PAE Maciej Kucharski1 , Johannes Borngr¨ ber1 , Defu Wang1 , Dietmar Kissinger1,2 , and Herman Jalli Ng1 a 2 IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany Technische Universit¨ t Berlin, Einsteinufer 17, 10587 Berlin, Germany a

Proceedings of the 12th European Microwave Integrated Circuits Conference Load Error Correction for High Power Load Dependent X-Parameter Measurements Bernhard Pichler, Norbert Leder, Gottfried Magerl, and Holger Arthaber Institute of Electrodynamics, Microwave and Circuit Engineering Technische Universit¨ t Wien, 1040 Vienna, Austria a Email: bpichler-emce.tuwien.ac.at Abstract--Models for acti

Proceedings of the 12th European Microwave Integrated Circuits Conference A Q-band Broadband On-Chip Antenna with Switches Backed by an Off-Chip reflector in 0.18-µm CMOS SOI Technology Yexi Song 1, 2, Yunqiu Wu1, Yin Tian2, 3, Chao Yu1, Kai Kang1* 1 University of Electronic Science and Technology of China, China 2 Sichuan Jiuzhou Electric Group Co., Ltd., China 3 Air Force Engineering Universit

Proceedings of the 12th European Microwave Integrated Circuits Conference Common-Drain CMOS Power Amplifier: An Alternative Power Amplifier Muhammad Abdullah Khan and Renato Negra Chair of High Frequency Electronics, RWTH Aachen University, 52074 Aachen, Germany. Email: abdullah.khan-rwth-aachen.de, negra-hfe.rwth-aaachen.de Abstract--In this paper, we present an 880 MHz commondrain power amplif