RF CMOS power amplifier using a split inter-stage inductor for IEEE 802.11n applications
Minoh Son, Jinho Yoo, Inseong Kang, Changhyun Lee, Jihoon Kim, Ho Jong Park, Young-Bae Park, Changkun Park
In this study, we design a differential CMOS power amplifier using a 180-nm SOI RFCMOS process for 802.11n (64-QAM, 20 MHz bandwidth, 9.6 dB peak to average power ratio (PAPR)) applications. To minimize the chip area and mismatch in differential signals, we propose a layout method with an inter-stage matching network using a split inductor. By virtue of the symmetrical layout of the proposed split