An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun
Rasmus S. Michaelsen, Tom K. Johansen, Kjeld M. Tamborg, Vitaliy Zhurbenko, Lei Yan
In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from ?51 to ?60.5 dB by tuning. Similarly, the IIP can be improved from 41.3 to 48.7 dBm at 11