Proceedings of the 11th European Microwave Integrated Circuits Conference High Performance Plastic Packaged 100 W L-band Quasi-MMIC HPA Diane Bouw, Philippe Sin, Marc Camiade, Jean Pierre Viaud United Monolithic Semiconductors SAS 10 avenue du Québec, 91140 Villebon-sur-Yvette, France Diane.Bouw-ums-gaas.com, Philippe.Sin-ums-gaas.com, Marc.Camiade-ums-gaas.com, Jean-Pierre.Viaud-ums-gaas.com int

Proceedings of the 11th European Microwave Integrated Circuits Conference Dual-Gate HEMT Parameter Extraction Based on 2.5D Multiport Simulation of Passive Structures Friedbert van Raay, Rüdiger Quay, Dirk Schwantuschke, Matthias Ohlrogge, Detlef Peschel, Michael Schlechtweg, and Oliver Ambacher Fraunhofer Inst. for Applied Solid-State Physics (IAF) Tullastr. 72, D-79108 Freiburg, Germany friedbe

Proceedings of the 11th European Microwave Integrated Circuits Conference A Surface Potential Large Signal Model for AlGaN/GaN HEMTs Qingzhi Wu1, Yuehang Xu1*, Zhang Wen1, Yan Wang2 and Ruimin Xu1 1 School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China 2 Institute of Microelectronics, Tsinghua University, Beijing, China *yuehangxu-uestc.edu.cn

Proceedings of the 11th European Microwave Integrated Circuits Conference GaN Laser Driver Switching 30 A in the Sub-Nanosecond Range Armin Liero, Andreas Klehr, Thomas Hoffmann, Thomas Prziwarka, and Wolfgang Heinrich Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik Berlin, Germany armin.liero-fbh-berlin.de Abstract--A GaN-HEMT-based laser driver circuit is presented which c

Proceedings of the 11th European Microwave Integrated Circuits Conference A Design Approach to Mitigate the Phase Distortion in GaN MMIC Doherty Power Amplifiers Rocco Giofr´ , Paolo Colantonio, and Franco Giannini e Electronic Engineering Departement, University of Roma Tor Vergata, via del Politecnico 1, 00133 ­ Roma, Italy Email: giofr-ing.uniroma2.it Abstract--A Gallium Nitride (GaN) Monolit

Proceedings of the 11th European Microwave Integrated Circuits Conference Quest for Vacuum Tubes' Replacement: 150 V UHF GaN Radar Transistors Gabriele Formicone, Jeff Burger, James Custer and John Walker Integra Technologies Inc. 321 Coral Circle El Segundo, CA, 90245 USA Abstract-- This paper analyzes the requirements for solidstate devices to replace vacuum tubes in radar systems and introduce

Proceedings of the 11th European Microwave Integrated Circuits Conference A 280 GHz Stacked-FET Power Amplifier Cell using 50 nm Metamorphic HEMT Technology B. Amado-Rey*, Y. Campos-Roca , C. Friesicke*, A. Tessmann*, R. Lozar*, S. Wagner *, A. Leuther*, M. Schlechtweg*, and O. Ambacher* *Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany Department of Computer and Commun

Proceedings of the 11th European Microwave Integrated Circuits Conference EM Analysis of Ka Band Multi-Throw PIN Diode MMIC Switches Andrzej Rozbicki, James J. Brogle M/A-COM Technology Solutions Holdings, Inc. ("MACOM") Lowell, Massachusetts, USA andrzej.rozbicki-macom.com Abstract-- Advantages and results of using a 3D EM simulator such as HFSS to design a compact integrated circuit (IC) are p

Proceedings of the 11th European Microwave Integrated Circuits Conference A 230 GHz Quadrupler with 2 dBm Output Power in 90 nm SiGe BiCMOS Technology Roee Ben Yishay and Danny Elad IBM Haifa Research Lab, Mount Carmel 31905 Haifa, Israel roeeby-il.ibm.com Abstract--A 230 GHz ×4 frequency multiplier chain implemented in an advanced 90 nm SiGe BiCMOS technology (fT/fMAX = 300/350 GHz) is presented

Proceedings of the 11th European Microwave Integrated Circuits Conference A 21 dBm 60 GHz SiGe Power Amplifier Using Modified Wilkinson Combiner Roee Ben Yishay and Danny Elad IBM Haifa Research Lab, Mount Carmel 31905 Haifa, Israel roeeby-il.ibm.com Abstract-- This paper presents a fully integrated 60 GHz power amplifiers (PA) fabricated in a 0.12 µm SiGe BiCMOS technology. The PA employs five