Proceedings of the 11th European Microwave Integrated Circuits Conference A 0.58-0.61THz Single On-Chip Antenna Transceiver Based on Active X30 LO Chain on 65nm CMOS Bassam Khamaisi, Samuel Jameson and Eran Socher School of Electrical Engineering, Tel-Aviv University, Tel-Aviv, Israel Email: bassamch-tau.ac.il Abstract--A fully integrated 0.58-0.61THz transceiver based on active X30 LO multiplier

Proceedings of the 11th European Microwave Integrated Circuits Conference Balanced G-Band Gm-Boosted Frequency Doublers in Transferred Substrate InP HBT Technology Tom K. Johansen1, Al-Sawaf Thualfiqar2, Nils Weimann2, Wolfgang Heinrich2 , and Viktor Krozer2 1 Technical University of Denmark, Department of Electrical Engineering, DK-2800 Kgs. Lyngby, Denmark Email: tkj-elektro.dtu.dk 2 Ferdinand

Proceedings of the 11th European Microwave Integrated Circuits Conference An Integrated Dual-Band Transmitter for Vital Sign Detection Radar Applications in 0.18-m CMOS Jen-Hao Cheng1 , Yi-Hsien Lin1 , Wen-Jie Lin1 , Jeng-Han Tsai2 , Tian-Wei Huang1 and Huei Wang1 1 Graduate Institute of Communication Engineering, National Taiwan University, 10617, Taipei, Taiwan 2 Dept. of Electrical Engineerin

Proceedings of the 11th European Microwave Integrated Circuits Conference A Low Power High Gain-Bandwidth E-Band LNA Kambiz Hadipour DICE GmbH & Co KG , Austria Johannes Kepler University Linz, Austria kambiz.hadipourabkenar-infineon.com Andreas Stelzer Institute for Communications Engineering & RF-Systems Johannes Kepler University Linz, Austria a.stelzer-nthfs.jku.at Abstract-- Powered by the

Proceedings of the 11th European Microwave Integrated Circuits Conference Characterization of Sub-THz Detection Array in 0.18 m CMOS Technology Jixin Chen, Weitian Liu, Pinpin Yan, Chenwei Jia, Debing Hou, Chao Yu, Wei Hong State Key Laboratory of Millimeter Waves, Southeast University; Nanjing, China; 211111 jxchen-seu.edu.cn Abstract--A 2×2 pixel array for Sub-THz detection in which each pixel

Proceedings of the 11th European Microwave Integrated Circuits Conference Broadband 2-stage GaN Power Amplifier in an 8×8mm Package Shingo Inoue, Kaname Ebihara Sumitomo Electric Device Innovations Inc. 1, Kanai-cho, Sakae-ku, Yokohama, Kanagawa 244-0845, Japan Abstract-- This paper presents compact two-stage GaN power amplifier devices composed of a printed circuit board (PCB) material. Both th

Proceedings of the 11th European Microwave Integrated Circuits Conference High-Q Tunable Filter with a Novel Tuning Structure J. Jiang and R.R. Mansour Center for Integrated RF Engineering (CIRFE) University of Waterloo Waterloo, ON, N2L 3G1, Canada j43jiang-uwaterloo.ca rrmansour-uwaterloo.ca Abstract--This paper presents a novel structure for realizing high-Q tunable combline filters using RF

Proceedings of the 11th European Microwave Integrated Circuits Conference Advances In MEMS Switches For RF Test Applications Tamir Moran1, Chris Keimel2, Todd Miller3 1 National Instruments, Austin, Texas 2 3 Menlo Microsystems, Niskayuna, New York GE Global Research, Niskayuna, New York sensitivity. Maximum isolation (ISO) is required for switching attenuators to optimize dynamic range and to a

Proceedings of the 11th European Microwave Integrated Circuits Conference A 2-GHz-band Low-Phase-Noise VCO IC with an LC Bias Circuit in 180-nm CMOS Xiao Xu, Xin Yang, Toshihiko Yoshimasu The Graduate School of Information, Production and Systems, Waseda University 2-7 Hibikino Wakamatsu-ku, Kitakyushu-shi, Fukuoka, JAPAN Email: yoshimasu-waseda.jp Abstract-- A novel LC bias topology is proposed

Proceedings of the 11th European Microwave Integrated Circuits Conference Self-Biasing Effects Induced by RF Step-Stress in Ka-Band LNAs based on InAlN/GaN HEMT Technology J.G. Tartarin, S.D. Nsele LAAS-CNRS and University of Toulouse (UPS) F31-031, Toulouse, France tartarin-laas.fr S. Piotrowicz, S. Delage Thales Research Technology, III-V Lab Palaiseau, France Abstract-- Nitride technologies