Proceedings of the 11th European Microwave Integrated Circuits Conference 3D Inkjet Printed Radio Frequency Inductors and Capacitors Mohammad Vaseem, Garret McKerricher, Atif Shamim King Abdullah University of Science and Technology, Electrical Engineering Program, CEMSE Division, Thuwal, Saudi Arabia mohammad.vaseem-kaust.edu.sa, garret.mckerricher-kaust.edu.sa, atif.shamim-kaust.edu.sa Abstrac

Proceedings of the 11th European Microwave Integrated Circuits Conference Predistortion- and Development-Platform for Multi-Input RF Power Amplifiers Peter Singerl , Thomas Magesacher, and Martin Mataln Technologies AG, Villach, Austria Email:peter.singerl-infineon.com Department of Electrical and Information Technology, Lund University, Sweden Infineon Abstract--We present a real-time digital

Proceedings of the 11th European Microwave Integrated Circuits Conference A 275 GHz Amplifier in 0.13µm SiGe Stefan Malz , Philipp Hillger , Bernd Heinemann and Ullrich R. Pfeiffer IHCT, University of Wuppertal, Rainer-Gruenter-Str. 21, D-42119 Wuppertal, Germany Email: smalz-uni-wuppertal.de IHP GmbH, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany Abstract--This paper presents a 27

Proceedings of the 11th European Microwave Integrated Circuits Conference A Low-cost 180 nm BiCMOS Technology with Horizontal Current Bipolar Transistor (HCBT) for Wireless Communication ICs Josip Zilak, Marko Korici and Tomislav Suligoj Department of Electronics University of Zagreb, FER, HR-10000, Zagreb. Croatia e-mail: tom-zemris.fer.hr Hidenori Mochizuki and So-ichi Morita Asahi Kasei Micro

Proceedings of the 11th European Microwave Integrated Circuits Conference Frequency Limitations of the Nitride and Arsenide HEMTs Yu. V. Fedorov, S.V. Mikhaylovich Institute of Ultra-High Frequency Semiconductor Electronics of RAS Moscow, Russia phone: +7-499-123-74-66; e-mails: iuhfse2010-yandex.ru, yuraf2002-mail.ru Abstract -- This paper presents an analysis of the ultimate potentials of the n

Proceedings of the 11th European Microwave Integrated Circuits Conference Geodetic VLBI Ultra Low Noise Broad-band Receiver for 13 meter VGOS radiotelescopes Pablo Garc´a-Carre~ o, Sonia Garc´a-Alvaro, i n i ´ Jos´ A. L´ pez-P´ rez, Mar´a Patino-Esteban, e o e i Jos´ M. Serna, Beatriz Vaquero-Jim´ nez, e e Jos´ A. L´ pez-Fern´ ndez e o a Centro Astron´ mico de Yebes o Instituto Geogr´ fico Nacion

Proceedings of the 11th European Microwave Integrated Circuits Conference Thermal Analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC Substrate through TCAD Simulations and Measurements A. K. Sahoo, N. K. Subramani, J-C. Nallatamby, R. Sommet, R. Quéré University of Limoges, CNRS, XLIM UMR7252 F-19100, Brive, France amit7phy-gmail.com Abstract-- In this paper, a comprehensive evaluation of therma

Proceedings of the 11th European Microwave Integrated Circuits Conference Solid-State RF Power Amplifiers for ISM CW Applications Based on 100 V GaN Technology Gabriele Formicone1, Jeff Burger1, James Custer1, Gianni Bosi2, Antonio Raffo2 and Giorgio Vannini2 1 Integra Technologies Inc., 321 Coral Circle, El Segundo, CA, 90245, USA 2 University of Ferrara, Department of Engineering, 44122 Ferrar

Proceedings of the 11th European Microwave Integrated Circuits Conference A 61 GHz Frequency Synthesizer in SiGe BiCMOS for 122 GHz FMCW Radar Arzu Ergintav 1*, Yaoming Sun 2, Frank Herzel 1, Herman J. Ng 1, Gunter Fischer 1, and Dietmar Kissinger 1,3 IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany * ergintav-ihp-microelectronics.com 2 HK Microsystem Integration Ltd., 61-63 King Yip

Proceedings of the 11th European Microwave Integrated Circuits Conference 20W S-Band High Power Amplifier Using Stacked FET Topology G. van der Bent, A.P. de Hek, F.E. van Vliet TNO, The Hague, The Netherlands gijs.vanderbent-tno.nl Abstract--Power amplifiers based on stacked Field Effect Transistor (FET) stages are often applied in silicon based technologies. The application of stacked FETs in G