EuMIC: Normally-Off AlGaN/GaN Recessed MOS-HEMTs on Normally-On Epitaxial Structures for Microwave Power Applications
L. Trinh Xuan, R. Aubry, N. Michel, O. Patard, J.-C. Jacquet, S. Piotrowicz, M. Oualli, P. Gamarra, C. Potier, D. Lancereau, S.L. Delage, Sylvain Laurent, Philippe Bouysse, Raymond Quere
Proceedings of the 11th European Microwave Integrated Circuits Conference
Normally-off AlGaN/GaN Recessed MOS-HEMTs on Normally-on Epitaxial Structures for Microwave Power Applications
L. Trinh Xuan, R. Aubry, N. Michel, O. Patard, J.-C. Jacquet, S. Piotrowicz, M. Oualli, P. Gamarra, C. Potier, D. Lancereau, and S. L. Delage
III-V Lab Palaiseau, France linh.trinh-xuan-3-5lab.fr
Abstract--This pap