Proceedings of the 11th European Microwave Integrated Circuits Conference Quasi-Circulator Based Automotive Monostatic Transceiver with Integrated Leakage Canceler Matthias Porranzl , Christoph Wagner , Herbert Jaeger and Andreas Stelzer for Communications Engineering and RF-Systems Johannes Kepler University of Linz, A-4040 Linz, Austria m.porranzl-nthfs.jku.at Danube Integrated Circuit Enginee

Proceedings of the 11th European Microwave Integrated Circuits Conference A Wideband Fully Integrated SiGe Chipset for High Data Rate Communication at 240 GHz N. Sarmah1 , P. R. Vazquez1, J. Grzyb1 , W. Foerster1 , B. Heinemann2 and U. R. Pfeiffer1 1 IHCT, University of Wuppertal, 42119 Wuppertal, Germany 2 IHP GmbH, 15236 Frankfurt Oder, Germany Abstract--This paper presents a fully integrated

Proceedings of the 11th European Microwave Integrated Circuits Conference Graphene Field Effect Transistors on Flexible Substrate: Stable Process and High RF Performance W. Wei1, E. Pallecchi1, M. Belhaj1, A. Centeno2, Z. Amaia2, D. Vignaud1, H. Happy1 1 Institute of Electronics, Microelectronics and Nanotechnology, (IEMN) CNRS UMR8520, Villeneuve d'Ascq, cedex, France 2 Graphenea, Avenida de To

Proceedings of the 11th European Microwave Integrated Circuits Conference A Packaged Hybrid Doherty PA for Microwave Links D. Gustafsson , K. Andersson Ericsson Research Ericsson AB, SE-417 56, Gothenburg, Sweden Email: david.a.gustafsson-ericsson.com A. Leidenhed, M. Malmstrom, A. Rhodin, T. Wegeland Ericsson Microwave Networks Ericsson AB, SE-417 56, Gothenburg, Sweden Abstract--The performa

Proceedings of the 11th European Microwave Integrated Circuits Conference Accurate FEM base nMOS switch modelling technique for RF applications Fadoua Gacim1,2, Philippe Descamps2, Nathalie Jourdan1 ¹NXP, Semiconductors, 2 Esplanade Anton Philips, Campus EffiScience, BP 20000, 14906 Caen Cedex 09, France fadoua.gacim-nxp.com, nathalie.jourdan-nxp.com ²LAMIPS, Laboratoire commun NXP-CRISMAT, UMR 6

Proceedings of the 11th European Microwave Integrated Circuits Conference Photonic BiCMOS Technology ­ Enabler for Si-Based, Monolithically Integrated Transceivers Towards 400 Gbps Stefan Lischke, Dieter Knoll, Lars Zimmermann, Pedro Rito, Ahmet Cagri Ulusoy, Ahmet Awny, Despoina Petousi, Iria Garcia Lopez, Christian Mai, Marcel Kroh, Bernd Heinemann, Holger Rücker, Rainer Barth, Jens Katzer, Mar

Proceedings of the 11th European Microwave Integrated Circuits Conference Characterization and Modeling of Frequency Dispersion in RF LDMOS Transistors Peter H. Aaen University of Surrey Advanced Technology Institute Guildford, Surrey, United Kingdom Lei Zhang and Kevin Kim RF Power Division NXP Semiconductors Chandler, AZ, USA Abstract--This paper characterises the effects of frequency dispers

Proceedings of the 11th European Microwave Integrated Circuits Conference Wideband 3 Way Doherty RFIC with12 dB Back-Off power range I. Blednov NXP Semiconductors Toulouse, France igor.blednov-nxp.com Abstract-- This work presents a study results of 3 Way Doherty amplifier (3WDPA) using LDMOS RFIC technology resulting in PAE=(45...55)% at 12 dB back-off power level with uniform AM-PM characteris

Proceedings of the 11th European Microwave Integrated Circuits Conference 3.4 to 4.8 GHz 65 nm CMOS Power Amplifier for Ultra Wideband Location Tracking Application in Emergency and Disaster Situations David Polge, Anthony Ghiotto, Eric Kerhervé Bordeaux University, Bordeaux INP, CNRS IMS, UMR 5218 F-33405 Talence, France david.polge-ims-bordeaux BeSpoon F-73372 Le Bourget du Lac, France pfa-besp

Proceedings of the 11th European Microwave Integrated Circuits Conference A 17.5-22.5 GHz Fractional ­ N Wideband Frequency Synthesizer in 65 nm CMOS Technology K. Giannakidis, S. Sgourenas, A. Kanteres, G. Kalivas Department of Electrical and Computer Engineering University of Patras Patras, Greece kgiannakidis-ece.upatras.gr Abstract--This paper presents a 65 nm CMOS fractional ­ N frequency sy