Proceedings of the 11th European Microwave Integrated Circuits Conference Broadband Non-Linear FET Behavioral Model Defined in the Admittance Domain M. Rocio Moure, Monica Fernandez-Barciela Signal Theory and Communications Department Universidad de Vigo Vigo, Spain mamoure-uvigo.es, monica.barciela-uvigo.es Michael Casbon, Paul J. Tasker School of Engineering Cardiff University Cardiff, United

Proceedings of the 11th European Microwave Integrated Circuits Conference Development of a DC to K-Band Ultra Long On-Life RF MEMS Switch with Integrated Driver Circuitry Eric Carty, Padraig Fitzgerald, Padraig McDaid, Bernard Stenson Analog Devices Raheen Business Park, Limerick, Ireland Raymond Goggin Analog Devices Bldg. 2200, Cork Airport Business Pk. Kinsale Rd, Cork, Ireland Abstract-- Th

Proceedings of the 11th European Microwave Integrated Circuits Conference Linearity Characterization of GaN HEMT Technologies Through Innovative On-Wafer Multitone Load-pull Measurements Si Abed Karim Kahil *+1, Sylvain Laurent *, Raymond Quéré *, Jacques Sombrin *, Didier Floriot +2, Valeria Brunel +, Charles Teyssandier + XLIM C2S2, 123 Avenue Albert Thomas, 87060 Limoges, France 1 si-abed-kari

Proceedings of the 11th European Microwave Integrated Circuits Conference Prediction of odd-mode instabilities under output mismatch effects Franco Ramírez, Almudena Suárez, Sergio Sancho Communications Engineering Department, University of Cantabria Av. Los Castros s/n, 39005, Santander, Spain Abstract--A methodology is presented to predict odd-mode instability in power amplifiers under output m

Proceedings of the 11th European Microwave Integrated Circuits Conference Wideband 148­188 GHz Push-Push VCO Using Variable Inductance and Capacitance Jidan Al-Eryani1,2 , Herbert Knapp2 , Hao Li2 , Jonas Wursthorn1,2 , Klaus Aufinger2 , Soran Majied2 , o Sabine Boguth2 , Rudolf Lachner2 , Josef B¨ ck2 , and Linus Maurer1 1 Universit¨ t der Bundeswehr M¨ nchen, 85577 Neubiberg, Germany a u 2 Inf

Proceedings of the 11th European Microwave Integrated Circuits Conference Integrated microfluidic channel with wire-bonded structure solenoid for tuneable inductor application Fatemeh Banitorfian1, Asrulnizam Abd Manaf 1,2,Farshad Eshghabadi1, Norlaili Mohd Noh1, Mohd Tafir Mustaffa1 1 Advanced Integrated System Device Group (AISDe), School of Electrical and Electronic Engineering 2 Collaborativ

Proceedings of the 11th European Microwave Integrated Circuits Conference MOSFET Divide-by-four Frequency Divider with Injection Locking at Main-gate and Back-gate Janne-Wha Wu Department of Communications Engineering and Advanced Institute of Manufacturing with High-tech Innovations National Chung Cheng University Chia-Yi, Taiwan, R.O.C. Chih-Ho Tu, Sheng-Wen Chen and Lo-Chun Tung Department of

Proceedings of the 11th European Microwave Integrated Circuits Conference 15 GHz 25 dBm Multigate-Cell Stacked CMOS Power Amplifier with 32 % PAE and 30 dB Gain for 5G Applications Narek Rostomyan, Jefy A. Jayamon, Peter Asbeck Department of Electrical and Computer Engineering, UC San Diego La Jolla, CA 92093, USA Email: nrostomyan-ucsd.edu Abstract--A three-stage stacked FET CMOS power amplifie

Proceedings of the 11th European Microwave Integrated Circuits Conference Characterization of Trapping in a GaN HEMT by Performing Isothermal Three-Stage Pulse Measurements Sayed Ali Albahrani Department of Engineering Macquarie University Sydney, Australia Email: albahrani.sayed-gmail.com Anthony Parker, Graham Town and Michael Heimlich Department of Engineering Macquarie University Sydney, Aus

Proceedings of the 11th European Microwave Integrated Circuits Conference Highly linear wideband CMOS RF power amplifier with active feedback in 130 nm CMOS technology Muhammad Abdullah Khan, Pierre Bousseaud, Renato Negra Chair of High Frequency Electronics, RWTH Aachen University, 52074 Aachen, Germany. Email: abdullah.khan-rwth-aachen.de, negra-ieee.org. Abstract--A wideband active feedback t