InAlN/GaN HEMTs based L-band high-power packaged amplifiers
Olivier Jardel, Jean-Claude Jacquet, Lény Baczkowski, Dominique Carisetti, Didier Lancereau, Maxime Olivier, Raphaël Aubry, Marie-Antoinette di Forte Poisson, Christian Dua, Stéphane Piotrowicz, Sylvain L. Delage
This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/m