Proceedings of the 9th European Microwave Integrated Circuits Conference Glance on Microwave Engineering Research Activities at King Saud University Ibrahim Elshafiey*, Abdel Fattah Sheta*, Hamsakutty Vettikalladi* and Khalid Jamil^ *Department of Electrical Engineering ^Prince Sultan Advanced Technologies Research Institute King Saud University Riyadh, Saudi Arabia ishafiey-KSU.EDU.SA Abstract-

Proceedings of the 9th European Microwave Integrated Circuits Conference Large-Signal Characterization of a Mixed-Signal SoC Receiver for Multiband SDR/CR Designs Diogo C. Ribeiro, Pedro Miguel Cruz and Nuno Borges Carvalho Instituto de Telecomunicacoes - Universidade de Aveiro (DETI), Aveiro, Portugal ¸~ dcribeiro-ua.pt pcruz-av.it.pt nbcarvalho-ua.pt Abstract--This paper shows a framework to ev

Proceedings of the 9th European Microwave Integrated Circuits Conference Design of a GaN HEMT Power Amplifier Using Resistive Loaded Harmonic Tuning Sebastian Preis1,2*, Zihui Zhang1, Mhd. Tareq Arnous1 2 Microwave Engineering Laboratory, Berlin Institute of Technology, Berlin, Germany Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany switch-mode or harmonic

Proceedings of the 9th European Microwave Integrated Circuits Conference A 25W X-band GaN PA in SMT Package Leckey, J.G M/A-COM Technology Solutions, Belfast, N. Ireland. jonathan.leckey-macomtech.com Abstract--A single stage X-band (9-10GHz) PA module has been developed using a discrete 0.25um GaN transistor with 4.8mm gate periphery, that incorporates input and output matching via discrete subs

Proceedings of the 9th European Microwave Integrated Circuits Conference Phase-Modulated DSM-PWM Hybrids with Pulse Length Restriction for Switch-Mode Power Amplifiers Daniel Markert , Christoph Haslach , Holger Heimpel , Andreas Pascht , and Georg Fischer Labs, Alcatel-Lucent Deutschland AG, 70435 Stuttgart, Lorenzstr. 10 Erlangen-Nuremberg, Institute for Electronics Engineering, 91058 Erlangen,

Proceedings of the 9th European Microwave Integrated Circuits Conference Improved phase linearity in Source Field Plate AlGaN/GaN HEMTs P. Colantonio, F. Giannini, R. Giofr´ and L. Piazzon e V. Camarchia, G. Ghione, M. Pirola and R. Quaglia A. Nanni, A. Pantellini and C. Lanzieri DEE - University of Roma Tor Vergata DET - Politecnico di Torino Selex ES - GaAs/GaN Foundry R&D Via del Politecnico 1

Proceedings of the 9th European Microwave Integrated Circuits Conference Structural Field Plate Length Optimization for High Power Applications Ahmet Toprak1, Gokhan Kurt1, Ozlem A. Sen1, Ekmel Ozbay1,2,3 2 Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey 3 Department of Physics

Proceedings of the 9th European Microwave Integrated Circuits Conference Asymmetrical Mechanical Design for Bouncing Suppression in RF-MEMS Switches Emilien Lemoine, Cyril Guines, Arnaud Pothier, Pierre Blondy XLIM-UMR CNRS 7252 Université de Limoges 87000 Limoges France Abstract-- Contact bouncing is among the most critical phenomenon reducing RF-MEMS reliability. This paper shows that very simp

Proceedings of the 9th European Microwave Integrated Circuits Conference X-band 10 W MMIC High-Gain Power Amplifier with up to 60% PAE David Sardin, Tibault Reveyrand and Zoya Popovi´ c Department of Electrical, Computer, and Energy Engineering (ECEE) University of Colorado at Boulder, CO 80309-0425, USA 60 50 40 Pout W Abstract--This paper describes a power amplifier operating at X-band demonst

Proceedings of the 9th European Microwave Integrated Circuits Conference Diamond FETs using heterojunction and high-k dielectrics Y. Koide, M. Imura, J. Liu, and M. Y. Liao Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS) Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan. Email: koide.yasuo-nims.go.jp, Abstract--In order to control the high-density hole carrier