Proceedings of the 9th European Microwave Integrated Circuits Conference Improved Microwave Noise Performance in 0.15m AlGaN/AlN/GaN HEMTs on Silicon G. I. Ng School of EEE, Nanyang Technological University 50 Nanyang Avenue, Singapore 639798 eging-ntu.edu.sg Abstract-- High-frequency microwave noise performances (2 GHz to 19 GHz) were investigated on AlGaN/AlN/GaN High Electron Mobility Transist

Proceedings of the 9th European Microwave Integrated Circuits Conference A Scalable HEMT Noise Model Based on FW-EM Analyses Andrea Nalli, Antonio Raffo, Giorgio Vannini Department of Engineering University of Ferrara Ferrara, Italy antonio.raffo-unife.it Sara D'Angelo, Davide Resca, Francesco Scappaviva MEC s.r.l. Bologna, Italy Giovanni Crupi, Giuseppe Salvo, Alina Caddemi DICIEAMA University

Proceedings of the 9th European Microwave Integrated Circuits Conference ESA perspective on the industrialisation of European GaN technology for space application A. R. Barnes and F. Vitobello Components Technology and Space Materials Division ESA/ESTEC, Noordwijk, The Netherlands Andrew.Barnes-esa.int, Fabio.Vitobello-esa.int Abstract--This paper reports on the component reliability improvement

Proceedings of the 9th European Microwave Integrated Circuits Conference Decade Bandwidth 4 bits MMIC Phase Shifter for T/R modules Mauro Ferrari, Luca Piattella Elettronica S.p.A. Via Tiburtina Valeria Km 13.7, 00131, Rome, Italy mauro.ferrari-elt.it, luca.piattella-elt.it Abstract--This paper presents the design approach and test results of a full passive, decade bandwidth GaAs MMIC, composed

Proceedings of the 9th European Microwave Integrated Circuits Conference Evaluation of GaN FET Power Performance Reduction Due to Nonlinear Charge Trapping Effects Alberto Santarelli1, Rafael Cignani1, Daniel Niessen1, Gian Piero Gibiino1,2, Pier Andrea Traverso1, Valeria Di Giacomo3, Christophe Chang3, Didier Floriot3, Dominique Schreurs2, Fabio Filicori1 DEI "Guglielmo Marconi", University of B

Proceedings of the 9th European Microwave Integrated Circuits Conference Blind detection of cyclostacionary signals taking advantage of cyclic spectrum leakage Daniel Malafaia, José Vieira and Ana Tomé Institute of Electronics and Telematics Engineering of Aveiro (IEETA) University of Aveiro Aveiro, Portugal danielmalafaia-ua.pt Abstract--In this article we describe a novel process for blind det

Proceedings of the 9th European Microwave Integrated Circuits Conference A D-Band 180° Phase Shifter with Very Low Amplitude- and Phase-Error D. M¨ ller , J. L¨ ngst , A. Tessmann , A. Leuther , T. Zwick and I. Kallfass u a Institute of Technology (KIT) Kaiserstrasse 12, D-76131 Karlsruhe, Germany University of Stuttgart Pfaffenwaldring 47, 70569 Stuttgart, Germany Fraunhofer Institute for Appl

Proceedings of the 9th European Microwave Integrated Circuits Conference GaN HEMT Noise Model Performance under Nonlinear Operation Matthias Rudolph , Laurent Escotte§ , and Ralf Doerner Ulrich-L.-Rohde Chair for RF and Microwave Technology, Brandenburg University of Technology Ferdinand-Braun-Institut, Leibniz-Institut f¨ r H¨ chstfrequenztechnik u o LAAS-CNRS § University of Toulouse (UPS),

Proceedings of the 9th European Microwave Integrated Circuits Conference An X-Band Low-Power CMOS Low Noise Amplifier with Transformer Inter-Stage Matching Networks Jeng-Han Tsai, Wang-Long Huang, Cheng-Yen Lin, and Ruei-An Chang Department of Electrical Engineering, National Taiwan Normal University, Taipei, Taiwan jhtsai-ntnu.edu.tw Abstract--This paper presents a low-power low noise amplifier

Proceedings of the 9th European Microwave Integrated Circuits Conference Diamond Delta Doped Structures Exhibiting Ultra-Sharp Interfaces C. Mer-Calfati, N. Tranchant, P.N. Volpe, J-C. Arnault, P. Bergonzo CEA, LIST, Diamond Sensors Laboratory, F-91191 Gif-sur-Yvette, France Abstract-- Boron delta-doping of diamond has appeared as a promising viable approach for the fabrication of high performanc