Proceedings of the 9th European Microwave Integrated Circuits Conference VSWR Testing of RF-Power GaN Transistors Olof Bengtsson1, Serguei Chevtchenko1, Amitabh Chowdhary2, Wolfgang Heinrich1, and Joachim Würfl1 Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany olof.bengtsson-fbh-berlin.de 2 European Space Agency (ESA), European Space Research and Technol

This paper presents a novel bootstrapped frequency doubler, which is used to implement a wideband frequency multiplier-by 8 with balanced differential output. In terms of conversion gain, common mode rejection, and output balance, the proposed frequency doubler achieved better performance than the conventional Gilbert-cell frequency doubler by adopting the proposed bootstrapp

Proceedings of the 9th European Microwave Integrated Circuits Conference Selex ES GaN Technology: improvements, results and R&D approach for 0.5µm and 0.25µm process C. Lanzieri, A. Pantellini, P. Romanini, F.Crispoldi, A. Nanni, R. Graffitti Selex ES - GaAs/GaN Foundry R&D Rome, Italy claudio.lanzieri-selex-es.com Abstract--The capability to build systems entirely based on European technologies

Proceedings of the 9th European Microwave Integrated Circuits Conference 50 Watt S-band Power Amplifier in 0.25 µm GaN Technology Gijs van der Bent, Peter de Hek, Marcel van der Graaf, Frank E. van Vliet TNO, 2597 AK, The Hague, The Netherlands Abstract--A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the t

Proceedings of the 9th European Microwave Integrated Circuits Conference 240 GHz Transmitter and Receiver for 3D Imaging System in SiGe BiCMOS Technology Wojciech Debski, Wolfgang Winkler Silicon Radar GmbH, Im Technologiepark 1 Frankfurt (Oder), Germany debski/winkler-siliconradar.com Johannes Borngräber IHP , Im Technologiepark 25, Frankfurt (Oder), Germany born-ihp-microelectronics.com Abstr

Proceedings of the 9th European Microwave Integrated Circuits Conference 28 Watt X-Band Silicon P-I-N Diode RFIC Switches James J. Brogle, Andrzej Rozbicki, Timothy E. Boles M/A-COM Technology Solutions Lowell, Massachusetts, USA Operational power limits of shunt diodes depend on the CT, RP, I-layer thickness and reverse bias voltage, and Rth of the diode. Again, the rise in diode junction temper

Proceedings of the 9th European Microwave Integrated Circuits Conference An 8-Way Power-Combining E-band Amplifier in a SiGe HBT Technology ¨ Erik Ojefors1 , Christer Stoij1 , Bernd Heinemann2 and Holger R¨ cker2 u 1 2 Sivers IMA AB, Torshamnsg. 9, SE-164 29 Kista, Sweden Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany Email: erik.ojefors-siversima.com Abstract--An E-band power amplifi

Proceedings of the 9th European Microwave Integrated Circuits Conference 20 nm Metamorphic HEMT Technology for Terahertz Monolithic Integrated Circuits Arnulf Leuther, Axel Tessmann, Patrick Doria, Matthias Ohlrogge, Matthias Seelmann-Eggebert, Hermann Maßler, Michael Schlechtweg, Oliver Ambacher Fraunhofer Institute for Applied Solid State Physics (IAF) Tullastrasse 72, D-79108 Freiburg, Germany

Proceedings of the 9th European Microwave Integrated Circuits Conference A SiGe-Based E-Band Power Amplifier with 17.7 dBm Output Power and 325-GHz GBW Muhammad Furqan, Faisal Ahmed, and Andreas Stelzer Institute for Communications Engineering and RF-Systems, Johannes Kepler University, Altenberger Str. 69, 4040 Linz, Austria PA are described alongwith its multi-channel operation. This is followe

Proceedings of the 9th European Microwave Integrated Circuits Conference Genetic-Algorithm-Based Sythesis of Low-Noise Amplifiers with Automatic Selection of Active Elements and DC Biases Department of Computer Systems Tomsk State University of Control Systems and Radioelectronics 40, Lenin Ave., Tomsk, Russia, 634050 alexey.kalentyev-gmail.com, leonid.babak-rambler.ru, dvgarays-gmail.com Abstrac