Proceedings of the 9th European Microwave Integrated Circuits Conference A Broadband 75 to 140 GHz Amplifier in 0.13-m SiGe HBT Process Ping-Han Ho, Yu-Hsuan Lin, Huei Wang and Chafik Meliani* Dept. of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University No. 1, Sec. 4, Roosevelt Road, 10617 Taipei, Taiwan. hueiwang-ntu.edu.tw *IHP, Im Technologiep

Proceedings of the 9th European Microwave Integrated Circuits Conference Design and Results of W-Band Power Detectors in a 130 nm SiGe BiCMOS Process Technology R. Jonsson and R. Malmqvist Dept. of Radar Systems Swedish Defence Research Agency (FOI) Linköping, Sweden rolf.jonsson-foi.se S. Reyaz and A. Rydberg Dept. of Engineering Sciences Uppsala University Uppsala, Sweden M. Kaynak IHP GmbH F

Proceedings of the 9th European Microwave Integrated Circuits Conference Hybrid LNAs with SiGe HBTs on 7th Generation BiCMOS Process Saswata Bhaumik1,2 and Jan Geralt bij de Vaate2 1 Central Research and Development, NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands, e-mail:saswata.Bhaumik-nxp.com 2 Research and Development, ASTRON, Oude Hoogeveensedijk 4, 7991 PD, Dwingeloo, T

Proceedings of the 9th European Microwave Integrated Circuits Conference Influence of Parasitic Effects of the "3 " Measurement Setup to Improve the Determination of GaN HEMTs Thermal Impedance Avcu Mustafa, Sommet Raphael and Quéré Raymond XLIM Université de Limoges 16 rue Jules Vallès, 19100 Brive La Gaillarde, France mustafa.avcu-unilim.fr Abstract--The thermal impedance of Gallium Nitride bas

Proceedings of the 9th European Microwave Integrated Circuits Conference A 0.18 µm CMOS Current Reuse Ultra-Wideband Low Noise Amplifier (UWB-LNA) with Minimized Group Delay Variations K. Yousef 1, H. Jia2, R. Pokharel3, A. Allam1, M. Ragab1 and H. Kanaya3 1 Elecectronics and Communications Engineering Dept., E-JUST, New Borg Al-Arab, Alex, Egypt 2 E-JUST Center, Kyushu University, Nishi-ku 819-

Proceedings of the 9th European Microwave Integrated Circuits Conference 6-12 GHz Double-Balanced Image-Reject Mixer MMIC in 0.25m AlGaN/GaN Technology M. van Heijningen, J.A Hoogland, A.P. de Hek, F.E. van Vliet Radar Technology Group TNO The Hague, The Netherlands Marc.vanHeijningen-tno.nl Abstract-- The front-end circuitry of transceiver modules is slowly being updated from GaAs-based MMICs to

Proceedings of the 9th European Microwave Integrated Circuits Conference 4-Bit SiGe Phase Shifter using Distributed Active Switches and Variable Gain Amplifier For X-Band Phased Array Applications Emre Ozeren, Can Çalikan, Murat Davulcu, Huseyin Kayahan, Yasar Gurbuz Sabanci University, Faculty of Engineering and Natural Sciences ­ FENS, Orhanli ­ Tuzla, 34956 Istanbul, Turkey Email: yasar-sabanc

Proceedings of the 9th European Microwave Integrated Circuits Conference Diamond RF Power Transistors: Present Status and Challenges Makoto Kasu 1,2*, Toshiyuki Oishi 1,2 2 Green Electronics Laboratories, Saga University, Japan Department of Electrical and Electronic Engineering, Saga University, Japan * kasu-cc.saga-u.ac.jp confirmed that the bulk conduction in the IIa-type diamond substrates i

Proceedings of the 9th European Microwave Integrated Circuits Conference Extracting a General Distortion Contribution Model from Quasi-Static and Non-Quasi-Static Models Janne P. Aikio, Timo Rahkonen Dept. of Electrical Engineering, University of Oulu, P.O. Box 4500, 90014, Oulu, FINLAND janne.aikio-oulu.fi Abstract - In this paper we propose a general transistor equivalent model structure especi

Proceedings of the 9th European Microwave Integrated Circuits Conference 4-bit, 1 to 4 GHz Reconfigurable Discriminator for Frequency Measurement M. Espinosa-Espinosa Centre Tecnològic de Telecomunicacions de Catalunya (CTTC), Barcelona, Spain. moises.espinosa-cttc.es I. Llamas-Garro Centre Tecnològic de Telecomunicacions de Catalunya (CTTC), Barcelona, Spain. ignacio.llamas-cttc.es B. G. M. de